Related papers: CMOS-Compatible, AlScN-Based Integrated Electro-Op…
Hybrid integration of plasmonics and Si photonics is a promising architecture for global microprocessor interconnects. To this end, practical plasmonic devices not only should provide athermal, broadband operation over wavelength-scale…
Electro-optic (EO) modulation is a key functionality to have on-chip. However, achieving a notable linear EO effect in stoichiometric silicon nitride has been a persistent challenge due to the material's intrinsic properties. Recent…
Photonic integrated circuits that exploit nonlinear optics in order to generate and process signals all-optically have achieved performance far superior to that possible electronically - particularly with respect to speed. Although…
Ultraviolet and visible integrated photonics are enabling for applications in quantum information, sensing, and spectroscopy, among others. Few materials support low-loss photonics into the UV, and the relatively low refractive index of…
Aluminum oxide is a promising material for visible-light integrated photonics due to its low optical loss and wide transparency window across the RGB spectrum. This work presents the design and experimental demonstration of an integrated…
Reliable operation of photonic integrated circuits at cryogenic temperatures would enable new capabilities for emerging computing platforms, such as quantum technologies and low-power cryogenic computing. The silicon-on-insulator platform…
From the onset of high-speed optical communications, lithium niobite (LN) has been the material of choice for electro-optic modulators owing to its large electro-optic response, wide transparent window, excellent thermal stability and…
Opto-mechanical systems have enabled wide-band optical frequency conversion and multi-channel all-optical radio frequency amplification. Realization of an on-chip silicon communication platform is limited by photodetectors needed to convert…
Analog photonic solutions offer unique opportunities to address complex computational tasks with unprecedented performance in terms of energy dissipation and speeds, overcoming current limitations of modern computing architectures based on…
Densely integrated active photonics is key for next generation on-chip networks for addressing both footprint and energy budget concerns. However, the weak light-matter interaction in traditional active Silicon optoelectronics mandates…
High-speed light emitters integrated on silicon chips can enable novel architectures for silicon-based optoelectronics, such as on-chip optical interconnects and silicon photonics. However, conventional light sources based on compound…
The Artificial Intelligence models pose serious challenges in intensive computing and high-bandwidth communication for conventional electronic circuit-based computing clusters. Silicon photonic technologies, owing to their high speed, low…
We review our recent progresses on frequency conversion in integrated devices, focusing primarily on experiments based on strip-loaded and quantum-well intermixed AlGaAs waveguides, and on CMOS-compatible high-index doped silica glass…
Atomic-layer and two-dimensional (2D) materials have emerged as essential building blocks for next-generation quantum and semiconductor technologies, where atomic-scale control over light-matter interactions is critical. However, their…
Reconfigurability of photonic integrated circuits (PICs) has become increasingly important due to the growing demands for electronic-photonic systems on a chip driven by emerging applications, including neuromorphic computing, quantum…
The ability to modulate light at high speeds is of paramount importance for telecommunications, information processing, and medical imaging technologies. This has stimulated intense efforts to master optoelectronic switching at visible and…
Efficient solid-state photon emitters with longer operating lifetimes in the ultraviolet (UV) wavelength range are crucial for optoelectronic devices. However, finding suitable material candidates has been a significant challenge. Here, we…
Here, we propose titanium nitride (TiN) as an alternative plasmonic material for an on-chip silicon plasmonic Schottky photodetector that is based on an internal photoemission process and operating at telecom wavelengths. The examined…
Silicon photonics in the near-Infra-Red, up to 1.6 um, is already one of key technologies in optical data communications, particularly short-range. It is also being prospected for applications in quantum computing, artificial intelligence,…
We demonstrate wideband integrated photonic circuits in sputter-deposited aluminum nitride (AlN) thin films. At both near-infrared and visible wavelengths, we achieve low propagation loss in integrated waveguides and realize high-quality…