Related papers: Growth of [001]-oriented polycrystalline Heusler a…
Thickness scaling of ferroelectricity in AlScN is a determining factor for its potential application in neuromorphic computing and memory devices. In this letter, we report on ultrathin (10 nm) Al0.72Sc0.28N films that are ferroelectrically…
We demonstrate electrical spin injection into multilayer graphene (MLG) in a lateral spin valve device from a highly spin-polarized Co2FeSi (CFS) Huesler electrode. Exfoliated MLG was transferred onto pre-patterned epitaxial CFS wires grown…
Single Crystalline Fe3-deltaO4 (0<=delta<=0.33) films have been epitaxially grown on InAs (001) substrates by molecular beam epitaxy using O2 as source of active oxygen. Under optimum growth conditions in-situ real time reflection…
This work reports on the structural and magnetic properties of Mn$_{2.7-x}$Fe$_{x}$Ga$_{1.3}$ Heusler films with different Fe content x (0 $\leqslant$ x $\leqslant$ 1.2). The films were deposited heteroepitaxially on MgO single crystal…
The Fe$_3$O$_4$/Si films are considered to be promising materials for THz spintronic applications due to their high temperature magnetic transition and semiconducting properties. In this article, we present the real part of the dielectric…
The feasibility of thermally driven spin injectors built from half-metallic Heusler alloys inserted between aluminum leads was investigated by means of {\em ab initio} calculations of the thermodynamic equilibrium and electronic transport.…
Although chiral magnetic materials have emerged as a potential ingredient in future spintronic memory devices, there are few comprehensive studies of magnetic properties in scalably-grown thin films. We present growth, systematic physical…
Half Metal Magnets are of great interest in the field of spintronics because of their potential full spin-polarization at the Fermi level and low magnetization damping. The high Curie temperature and predicted 0.7eV minority spin gap make…
Thin films of aluminum hafnium nitride (Al$_{1-x}$Hf$_{x}$N) were synthesized via reactive magnetron sputtering for Hf contents up to $x$ = 0.13. X-ray diffraction showed a single $c$-axis oriented wurtzite phase for all films. Hard X-ray…
The equiatomic quaternary Heusler alloy CoFeCrAl is a candidate material for spin-gapless semiconductors (SGSs). However, to date, there have been no experimental attempts at fabricating a junction device. This paper reports a fully…
Topological quantum materials can exhibit unconventional surface states and anomalous transport properties. Still, their applications in spintronic devices are restricted as they require the growth of high-quality thin films with bulk-like…
Biaxially textured FeSe1-xTex films have been realized on Fe-buffered MgO substrates by pulsed laser deposition. Similar to the Fe/BaFe2As2 bilayers, the crystalline quality of FeSe1-xTex films exhibit a sharp out-of-plane and in-plane…
The remarkably high superconducting transition temperature and upper critical field of iron(Fe)-based layered superconductors, despite ferromagnetic material base, open the prospect for superconducting electronics. However, success in…
Co2FeSi, a Heusler alloy with the highest magnetic moment per unit cell and the highest Curie temperature, has largely been described theoretically as a half-metal. This conclusion, however, disagrees with Point Contact Andreev Reflection…
An extensive experimental investigation on the structural, static magnetic, and non-equilibrium dynamical properties of polycrystalline Mn$_2$CuGe Heusler alloy using powder X-ray diffraction, DC magnetization, magnetic relaxation, magnetic…
Diluted magnetic semiconductors (DMSs) based on group-IV materials are desirable for spintronic devices compatible with current silicon technology. In this work, amorphous Mn-doped SiGe thin films were first fabricated on Ge substrates by…
We studied the low temperature (T<130K) growth of Ag on Si(001) and Si(111) flat surfaces prepared by Si homo epitaxy with the aim to achieve thin metallic films. The band structure and morphology of the Ag overlayers have been investigated…
Spin-gapless semiconductors (SGSs) that simultaneously host fully compensated ferrimagnetism are highly sought for energy-efficient and stray-field-free spintronic technologies, yet their realization in chemically disordered systems has…
Soft ferromagnetic NiFe thin films are promising for applications in spintronic devices because of their constituent electrical and magnetic properties. Electron beam evaporation and sputtering techniques have been used to deposit NiFe thin…
In this paper, we report the theoretical investigation and experimental realization of a new spin-gapless semiconductor (SGSs) compound CoFeMnSn belonging to the family of quaternary Heusler alloys. Through the use of several ground-state…