Related papers: Transition from edge- to bulk-currents in the quan…
The edge structure of the $\nu=2/3$ fractional quantum Hall state has been studied for several decades but recent experiments, exhibiting upstream neutral mode(s), a plateau at a Hall conductance of $\frac{1}{3}( e^2/h)$ through a quantum…
We report in this paper results of experimental and theoretical studies of transitions between different integer quantum Hall phases, as well as transition between the insulating phase and quantum Hall phases at high magnetic fields. We…
We use numerical simulations to predict peculiar magnetotransport fingerprints in polycrystalline graphene, driven by the presence of grain boundaries of varying size and orientation. The formation of Landau levels is shown to be restricted…
We show how the quantum Hall effect in an inverted-gap semiconductor (with electron- and hole-like states at the conduction- and valence-band edges interchanged) can be used to inject, precess, and detect the electron spin along a…
We theoretically investigate quantum transport properties of quantum anomalous Hall bilayers, with arbitrary ratio of lattice constants, i.e., with lattice mismatch. In the simplest case of ratio 1 (but with different model parameters in…
We theoretically investigate electrical transport in a quantum Hall system hosting bulk and edge current carrying states. Spatially varying magnetic and electric confinement creates pairs of current carrying lines that drift in the same or…
We perform first principles numerical simulations to investigate resistance fluctuations in mesoscopic samples, near the transition between consecutive Quantum Hall plateaus. We use six-terminal geometry and sample sizes similar to those of…
Hall and diagonal resistances of bilayer fractional quantum Hall systems are discussed theoretically. The bilayers have electrodes attached separately to each layer. They are assumed to be coupled weakly by interlayer tunneling, while the…
Quantum interference between one- and two-photon absorption pathways allows coherent control of interband transitions in unbiased bulk semiconductors; carrier population, carrier spin polarization, photocurrent injection, and spin current…
We formulate a self-consistent model of the integer quantum Hall effect on an infinite strip, using boundary conditions to investigate the influence of finite-size effects on the Hall conductivity. By exploiting the translation symmetry…
We study theoretically dynamic response of a mesoscopic capacitor, which consists of a quantum dot connected to an electron reservoir via a point contact and capacitively coupled to a gate voltage. A quantum Hall edge state with a filling…
The integer quantum Hall (QH) effects characterized by topologically quantized and nondissipative transport are caused by an electrically insulating incompressible phase that prevents backscattering between chiral metallic channels. We…
The temperature and scale dependence of resistivities in the standard scaling theory of the integer quantum Hall effect is discussed. It is shown that recent experiments, claiming to observe a discrepancy with the global phase diagram of…
A quantum phase transition is an unequivocal signature of strongly correlated many-body physics. Signatures of such phenomena are yet to be observed in ballistic transport through quantum wires. Recent developments in quantum wires have…
Possible phase transitions between incompressible quantum Hall states and compressible three-dimensional states are discussed for infinite-layer electron systems in strong magnetic field. By variational Monte Carlo calculation, relative…
A numerical study is made of current distributions in finite-width Hall bars with disorder and some theoretical observations are verified. The equilibrium current and the Hall current are substantially different in distribution. It is…
The mapping between the metal-insulator transition of the quantum Hall system and a superfluid-to-insulator transition is revisited based on a disordered anyon model. The one-parameter scaling of the superfluid-to-insulator transition is…
We discuss the quantum Hall effect of bilayer graphene with finite gate voltage where the Fermi energy exceeds the interlayer hopping energy. We calculated magnetic susceptibility, diagonal and off-diagonal conductivities in…
While the disorder-induced quantum Hall (QH) effect has been studied previously, the effect ofdisorder potential on microscopic features of the integer QH effect remains unclear, particularly forthe incompressible (IC) strip. In this…
At total filling factor $\nu=1$ quantum Hall bilayers can have an ordered ground state with spontaneous interlayer phase coherence. The ordered state is signaled experimentally by dramatically enhanced interlayer tunnel conductances at low…