Related papers: Gate-defined quantum point contacts in a germanium…
Quantum dots induced by a strong magnetic field applied to a single layer of graphene in the perpendicular direction are investigated. The dot is defined by a model potential which consists of a well of depth $\Delta V$ relative to a flat…
The integer quantum Hall effect is a well-studied phenomenon at frequencies below about 100 Hz. The plateaus in high-frequency Hall conductivity were experimentally proven to retain up to 33 GHz, but the behavior at higher frequencies has…
The surface states of topological insulators, which behave as charged massless Dirac fermions, are studied in the presence of a quantizing uniform magnetic field. Using the method of D.H. Lee[1], analytical formula satisfied by the energy…
We present detailed experimental studies of the temperature dependence of the plateau conductance of GaAs quantum point contacts in the temperature range from 0.3 K to 10 K. Due to a strong lateral confinement produced by a shallow-etching…
Quantum antidot, a small potential hill introduced into a two-dimensional electron system, presents an attractive tool to study quantum mechanics of interacting electrons.Here, we report experiments on electron resonant tunneling via a…
We report on an observation of a fractional quantum Hall effect in an ultra-high quality two-dimensional hole gas hosted in a strained Ge quantum well. The Hall resistance reveals precisely quantized plateaus and vanishing longitudinal…
We evaluate the Lande g factor of electrons in quantum dots (QDs) fabricated from GaAs quantum well (QW) structures of different well width. We first determine the Lande electron g factor of the QWs through resistive detection of electron…
The interplay between Coulomb interactions and kinetic energy underlies many exotic phases in condensed matter physics. In a two-dimensional electronic system, If Coulomb interaction dominates over kinetic energy, electrons condense into a…
We have realized an integer quantum Hall system with superconducting contacts by connecting graphene to niobium electrodes. Below their upper critical field of 4 tesla, an integer quantum Hall effect coexists with superconductivity in the…
Magneto-transport measurements on electrons confined to a 57 nm-wide, GaAs quantum well reveal that the correlated electron states at low Landau level fillings ($\nu$) display a remarkable dependence on the symmetry of the electron charge…
Graphene quantum dots (GQDs) can exhibit a range of spectacular phenomena such as the Klein-tunneling-induced quasibound states1-6 and Berry-phase-tuned energy spectra7-15. According to previous studies, all these interesting quantum…
We have measured the quantum-Hall activation gaps in graphene at filling factors $\nu=2$ and $\nu=6$ for magnetic fields up to 32 T and temperatures from 4 K to 300 K. The $\nu =6$ gap can be described by thermal excitation to broadened…
Analytical calculations based on a Landau Level (LL) picture are reported for a many-electron system moving in an interface (with a finite-width Quantum Well (QW)) and in the presence of an external perpendicular magnetic field. They lead…
Transport measurements are performed on InAs/GaSb double quantum wells at zero and finite magnetic fields applied parallel and perpendicular to the quantum wells. We investigate a sample in the inverted regime where electrons and holes…
We study the conductance $g$ of an electron interferometer created in a two dimensional electron gas between a nanostructured contact and the depletion region induced by the charged tip of a scanning gate microscope. Using non-interacting…
We report the fabrication and characterization of an electrostatic quantum dot in pure Germanium with an integrated charge measurement transistor. The device uses the Al2O3/Germanium interface for the confinement of carriers in the…
The recent discovery of the 3D quantum Hall effect in $\mathrm{HfTe_5}$ has also revealed puzzling signatures of possible 3D fractionalization. Beyond the first plateau associated with the lowest Landau band, Hall conductivity exhibits a…
We report the observation of the quantized Hall effect in suspended graphene probed with a two-terminal lead geometry. The failure of earlier Hall-bar measurements is discussed and attributed to the placement of voltage probes in mesoscopic…
We investigate carrier transport in a single 22 nm-thick double-gated Si quantum well device, which has independent contacts to electrons and holes. Conductance, Hall density and Hall mobility are mapped in a broad double-gate voltage…
The co-integration of spin, superconducting, and topological systems is emerging as an exciting pathway for scalable and high-fidelity quantum information technology. High-mobility planar germanium is a front-runner semiconductor for…