Related papers: Heterogeneous sapphire-supported low-loss photonic…
In this paper, we demonstrate the integration of photonic devices on sapphire substrates using multi-layer depressed cladding waveguides at both 780 nm and 1550 nm. The devices are up to 10-cm long and written at depths down to 400 um. The…
The development of versatile and novel material platforms for integrated photonics is of prime importance in the perspective of future applications of photonic integrated circuits for quantum information and sensing. Here we present a…
Photonic integrated circuits (PICs) have been acknowledged as the promising platforms for the applications in data communication, Lidar in autonomous driving vehicles, innovative sensor technology, etc. Since the demonstration of optical…
Titanium doped sapphire (Ti:sapphire) is a laser gain material with broad gain bandwidth benefiting from the material stability of sapphire. These favorable characteristics of Ti:sapphire have given rise to femtosecond lasers and optical…
Broadband mid-infrared (mid-IR) spectroscopy applications could greatly benefit from today's well-developed, highly scalable silicon photonics technology; however, this platform lacks broadband transparency due to its reliance on absorptive…
Heterogeneous integration of gain and strongly nonlinear materials with ultra-low-loss silicon nitride (SiN) photonics offers a route to scalable quantum circuits, but concurrent wafer-scale manufacturability, low interlayer loss, and high…
We report record low loss silicon-on-sapphire nanowires for applications to mid infrared optics. We achieve propagation losses as low as 0.8dB/cm at 1550nm, 1.1 to 1.4dB/cm at 2080nm and < 2dB/cm at = 5.18 microns.
Broadband active materials are pivotal for advancing emerging technologies spanning on-chip optical interconnects, artificial intelligence, quantum systems and precision metrology. Current semiconductor gain media face bandwidth…
Graphene photonics has emerged as a promising platform for providing desirable optical functionality. However, graphene's monolayer-scale thickness fundamentally restricts the available light matter interaction, posing a critical design…
Fully CMOS-compatible photonic memory holding devices hold a potential in a development of ultrafast artificial neural networks. Leveraging the benefits of photonics such as high-bandwidth, low latencies, low-energy interconnect and high…
Sapphire is an attractive material in photonic, optoelectronic, and transparent ceramic applications that stand to benefit from surface functionalization effects stemming from micro/nanostructures. Here we investigate the use of ultrafast…
Periodically poled thin-film lithium niobate (TFLN) waveguides have emerged as a leading platform for highly efficient frequency conversion in the near-infrared. However, the commonly used silica bottom-cladding results in high absorption…
Integrated photonics is a powerful platform that can improve the performance and stability of optical systems, while providing low-cost, small-footprint and scalable alternatives to implementations based on free-space optics. While great…
Besides being the foundational material for microelectronics, in optics, crystalline silicon has long been used for making infrared lenses and mirrors. More recently, silicon has become the key material to achieve large-scale integration of…
High-quality factor plasmonic devices are crucial components in the fields of nanophotonics, quantum computing and sensing. The majority of these devices are required to be fabricated on non-lattice matched or transparent amorphous…
Traditional silicon-on-insulator (SOI) platform based on-chip photonic interconnects have limited energy-bandwidth scalability due to the optical non-linearity induced power constraints of the constituent photonic devices. In this paper, we…
Extending two-dimensional photonic integrated circuits (PICs) to three-dimensional (3D) configurations promises great potential for scaling up integration, enhancing functionality, and improving performance of PICs. Silicon-based 3D PICs…
Monolayer transition metal dichalcogenides with direct bandgaps are emerging candidates for microelectronics, nano-photonics, and optoelectronics. Transferred onto photonic integrated circuits (PICs), these semiconductor materials have…
A promising solution for scalable integrated optics of trapped-ion quantum processors are curved waveguides guiding visible light within sapphire bulk material. To the best of our knowledge, no curved waveguides were investigated in…
Low phase noise lasers based on the combination of III-V semiconductors and silicon photonics are well established in the near-infrared spectral regime. Recent advances in the development of low-loss silicon nitride-based photonic…