Related papers: Probing valley phenomena with gate-defined valley …
The ability to resolve the polarization of light with on-chip devices represents an urgent problem in optoelectronics. The detectors with polarization resolution demonstrated so far mostly require multiple oriented detectors or movable…
We propose a directional switching effect in a metallic device. To such end we exploit a graphene-based device with a three-terminal geometry in the presence of a magnetic field. We show that unidirectional charge and valley currents can be…
We report low temperature high magnetic field scanning tunneling microscopy and spectroscopy of graphene flakes on graphite that exhibit the structural and electronic properties of graphene decoupled from the substrate. Pronounced peaks in…
The existence of inequivalent valleys K and K' in the momentum space of two-dimensional hexagonal lattices provides a new electronic degree of freedom, the manipulation of which can potentially lead to new types of electronics, in analogy…
The tunnel current (TC) and valley current (VC) are crucial in realizing high-speed and energy-saving in next-generation devices. This paper presents the TC and VC link in the partially overlapped graphene. Under the vertical electric…
Quantum Hall effects offer a formidable playground for the investigation of quantum transport phenomena. Edge modes can be detected, branched, and mixed by designing a suitable potential landscape in a two-dimensional conducting system…
The few-layer graphene quantum dot provides a promising platform for quantum computing with both spin and valley degrees of freedom. Gate-defined quantum dots in particular can avoid noise from edge disorders. In connection with the recent…
Interfacing atomically thin van der Waals semiconductors with magnetic substrates enables additional control on their intrinsic valley degree of freedom and provides a promising platform for the development of novel valleytronic devices for…
We analyze the problem of electronic transmission through different regions of a graphene sheet that are characterized by different types of connections between the Dirac points. These valley symmetry breaking Hamiltonians might arise from…
The magnetic field dependence of energy levels in gapped single- and bilayer graphene quantum dots (QDs) defined by electrostatic gates is studied analytically in terms of the Dirac equation. Due to the absence of sharp edges in these types…
The valley degree of freedom of electrons in two-dimensional transition metal dichalcogenides has been extensively studied by theory, optical and optoelectronic experiments. However, generation and detection of pure valley current without…
We investigate the electronic transport in graphene nanoelectromechanical resonators (GrNEMS), known also as graphene nanodrums or nanomembranes. We demonstrate that these devices, despite small values of out-of-plane strain, between $0.1$…
In Si/SiGe heterostructures, the low-lying excited valley state seriously limit operability and scalability of electron spin qubits. For characterizing and understanding the local variations in valley splitting, fast probing methods with…
We present transport measurements of tunnel junctions made between Cu and graphene in a magnetic field. We observe a transition to a Landau level like structure at high fields, as well as a set of sharp features in the tunneling spectra…
We predict the coexistence of tunneling spin and valley Hall effects when electrons in graphene coherently transmit through a barrier with the broken inversion symmetry and proximity-induced spin-orbit coupling. Due to the rotation of the…
Transition metal dichalcogenide semiconductors represent elementary components of layered heterostructures for emergent technologies beyond conventional opto-electronics. In their monolayer form they host electrons with quantized circular…
We explore a two-qubit system defined on valley isospins of two electrons confined in a gate-defined double quantum dot created within a MoS$_2$ monolayer flake. We show how to initialize, control, interact and read out such valley qubits…
In this letter we study the valley degeneracy splitting of the transition-metal dichalcogenides monolayer by first-principles calculations. The local magnetic moments are introduced into the system when the transition-metal atoms are…
The interplay of massive electrons with spin-orbit coupling in bulk graphene results in a spin-valley dependent gap. Thus, a barrier with such properties can act as a filter, transmitting only opposite spins from opposite valleys. In this…
We present transport measurements on a bilayer graphene sheet with homogeneous back gate and split top gate. The electronic transport data indicates the capability to direct electron flow through graphene nanostructures purely defined by…