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Nuclear spins with hyperfine coupling to single electron spins are highly valuable quantum bits. In this work we probe and characterise the particularly rich nuclear spin environment around single silicon vacancy color-centers (V2) in…
The unique electrical and material properties of 4H-silicon-carbide (4H-SiC) make it a promising candidate material for high rate particle detectors. In contrast to the ubiquitously used silicon (Si), 4H-SiC offers a higher carrier…
4H Silicon Carbide (4H-SiC) combines many attractive properties such as a high carrier mobility, a wide bandgap, and a high thermal conductivity, making it an ideal candidate for high-power electronic devices. However, a primary challenge…
Larger arrays of electron spin qubits require radical improvements in fabrication and device uniformity. Here we demonstrate excellent qubit device uniformity and tunability from 300K down to mK temperatures. This is achieved, for the first…
Defects in silicon carbide (SiC) have emerged as a favorable platform for optically-active spin-based quantum technologies. Spin qubits exist in specific charge states of these defects, where the ability to control these states can provide…
Nuclear spins in the solid state are both a cause of decoherence and a valuable resource for spin qubits. In this work, we demonstrate control of isolated 29Si nuclear spins in silicon carbide (SiC) to create an entangled state between an…
Single atomic adsorbates on ultrathin insulating films provide a promising route toward bottom-up quantum architectures based on atomically identical yet individually addressable spin qubits on solid surfaces. A key challenge in engineering…
Quantum technology relies on proper hardware, enabling coherent quantum state control as well as efficient quantum state readout. In this regard, wide-bandgap semiconductors are an emerging material platform with scalable wafer fabrication…
Quantum emitters hosted in crystalline lattices are highly attractive candidates for quantum information processing, secure networks and nanosensing. For many of these applications it is necessary to have control over single emitters with…
Thin film 4H-silicon carbide (4H-SiC) is emerging as a contender for realizing large-scale optical quantum circuits due to its high CMOS technology compatibility and large optical nonlinearities. Though, challenges remain in producing…
Silicon vacancy centers in 4H-silicon carbide (SiC) host a long-lived electronic spin and simultaneously possess spin-resolved optical transitions, making them a great candidate for implementing a spin-photon interface. These interfaces are…
Superconductivity in the two-dimensional (2D) limit is a fertile ground for exotic quantum phenomena-many of which remain elusive in their 3D counterparts. While studies of 2D superconductivity have predominantly focused on mono- or…
Stabilized FeSe thin films in ambient pressure with tunable superconductivity would be a promising candidate for superconducting electronic devices yet its superconducting transition temperature (Tc) is below 10 K in bulk materials. By…
Transition metal ions provide a rich set of optically active defect spins in wide bandgap semiconductors. Chromium (Cr4+) in silicon-carbide (SiC) produces a spin-1 ground state with a narrow, spectrally isolated, spin-selective,…
Silicon carbide (SiC) has attracted significant attention as a promising quantum material due to its ability to host long-lived, optically addressable color centers with solid-state photonic interfaces. The CMOS compatibility of 4H-SiCOI…
Characterizing microstructural effects on the dynamical response of materials is challenging due to the extreme conditions and the short timescales involved. For example, little is known about how grain boundary characteristics affect spall…
Silicon spin qubits are a promising quantum computing platform offering long coherence times, small device sizes, and compatibility with industry-backed device fabrication techniques. In recent years, high fidelity single-qubit and…
Optically addressable spin defects in silicon carbide (SiC) are an emerging platform for quantum information processing. Lending themselves to modern semiconductor nanofabrication, they promise scalable high-efficiency spin-photon…
Colour centres in silicon carbide emerge as a promising semiconductor quantum technology platform with excellent spin-optical coherences.However, recent efforts towards maximising the photonic efficiency via integration into nanophotonic…
We demonstrate direct, acoustically mediated spin control of naturally occurring negatively charged silicon monovacancies (V$_{Si}^-$) in a high quality factor Lateral Overtone Bulk Acoustic Resonator fabricated out of high purity…