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True random number generators are of great interest in many computing applications such as cryptography, neuromorphic systems and Monte Carlo simulations. Here we investigate perpendicular magnetic tunnel junction nanopillars (pMTJs)…

Perpendicular magnetic tunnel junctions (pMTJs) actuated by nanosecond pulses are emerging as promising devices for true random number generation (TRNG) due to their intrinsic stochastic behavior and high throughput. In this work, we study…

We demonstrate a method to generate application-ready truly random bits from a magnetic tunnel junction driven by a Field-Programmable Gate Array (FPGA). We implement a real-time feedback loop that stabilizes the switching probability near…

Nanoscale magnetic tunnel junction (MTJ) devices can efficiently convert thermal energy in the environment into random bitstreams for computational modeling and cryptography. We recently showed that perpendicular MTJs activated by…

In recent years, true random number generators (TRNGs) based on magnetic tunnelling junction (MTJ) have become increasingly attractive. This is because MTJ-based TRNGs offer some advantages over traditional CMOS-based TRNGs, such as smaller…

We review two magnetic tunnel junction (MTJ) approaches for compact, low-power, CMOS-integrated true random number generation (TRNG). The first employs passive-read, easy-plane superparamagnetic MTJs (sMTJs) that generate…

Magnetic tunnel junctions (MTJs), which are the fundamental building blocks of spintronic devices, have been used to build true random number generators (TRNGs) with different trade-offs between throughput, power, and area requirements.…

Deterministic pseudo random number generators (PRNGs) used in generative artificial intelligence (GAI) models produce predictable patterns vulnerable to exploitation by attackers. Conventional defences against the vulnerabilities often come…

Perpendicular magnetic tunnel junction (pMTJ)-based true-random number generators (RNG) can consume orders of magnitude less energy per bit than CMOS pseudo-RNG. Here, we numerically investigate with a macrospin Landau-Lifshitz-Gilbert…

This work investigates nanosecond superparamagnetic switching in 50 nm diameter in-plane magnetized magnetic tunnel junctions (MTJs). Due to the small in-plane uniaxial anisotropy, dwell times below 10 ns and auto-correlation times down to…

High-quality random numbers are very critical to many fields such as cryptography, finance, and scientific simulation, which calls for the design of reliable true random number generators (TRNGs). Limited by entropy source, throughput,…

True random number generators (TRNGs) are fundamental building blocks for many applications, such as cryptography, Monte Carlo simulations, neuromorphic computing, and probabilistic computing. While perpendicular magnetic tunnel junctions…

Many emerging alternative models of computation require massive numbers of random bits, but their generation at low energy is currently a challenge. The superparamagnetic tunnel junction, a spintronic device based on the same technology as…

Recently there is considerable interest to realize efficient and low-cost true random number generators (RNGs) for practical applications. One important way is through the use of bistable magnetic tunnel junctions (MTJs). Here we study the…

Physical devices exhibiting stochastic functions with low energy consumption and high device density have the potential to enable complex probability-based computing algorithms, accelerate machine learning tasks, and enhance hardware…

The emerging Spin Transfer Torque Magnetic Tunnel Junction (STT-MTJ) technology exhibits interesting stochastic behavior combined with small area and low operation energy. It is, therefore, a promising technology for security applications,…

Low-energy random number generation is critical for many emerging computing schemes proposed to complement or replace von Neumann architectures. However, current random number generators are always associated with an energy cost that is…

This work represents integration of MTJ with 30nm FinFET for low voltage analog write operations and readout optimization for the p-bit or true random number generator (TRNG), where the induced p-bit, the probabilistic state of the magnetic…

Probabilistic computing using random number generators (RNGs) can leverage the inherent stochasticity of nanodevices for system-level benefits. The magnetic tunnel junction (MTJ) has been studied as an RNG due to its thermally-driven…

The emerging magneto-resistive RAM (MRAM) has considerable potential to become a universal memory technology because of its several advantages: unlimited endurance, lower read/write latency, ultralow-power operation, high-density, and CMOS…