Related papers: Importance of the semimetallic state for the quant…
Symmetry, dimensionality, and interaction are crucial ingredients for phase transitions and quantum states of matter. As a prominent example, the integer quantum Hall effect (QHE) represents a topological phase generally regarded as…
The material ZrTe$_5$ exhibits distinct topological phases, including a Weyl semimetal phase, characterized by a chiral anomaly and in-plane Hall effect, and a three-dimensional quantum Hall phase. The relationship between these phases…
The quantum limit (QL) of an electron liquid, realised at strong magnetic fields, has long been proposed to host a wealth of strongly correlated states of matter. Electronic states in the QL are, for example, quasi-one dimensional (1D),…
The quantum Hall effect (QHE) is traditionally considered a purely two-dimensional (2D) phenomenon. Recently, a three-dimensional (3D) version of the QHE has been reported in the Dirac semimetal ZrTe5. It was proposed to arise from a…
A three-dimensional (3D) topological insulator (TI) is a quantum state of matter with a gapped insulating bulk yet a conducting surface hosting topologically-protected gapless surface states. One of the most distinct electronic transport…
The electronic property and magnetic susceptibility of Ce$_3$Pd$_3$Bi$_4$ were systemically investigated from 18 K to 290 K for varying values of cell-volume using dynamic mean-field theory coupled with density functional theory. By…
Recent experiments suggest that low carrier density three-dimensional (3D) metals ZrTe$_5$ and HfTe$_5$ exhibit the 3D quantum Hall (QH) effect with Hall resistivity plateaus and a metal-insulator transition in strong magnetic fields. The…
This paper reviews recent developments in the theory of the quantum Hall effect (QHE) in the magnetic-field-induced spin-density-wave (FISDW) state of the quasi-one-dimensional organic conductors (TMTSF)$_2$X. The origin and the basic…
We study the quantum Hall effect (QHE) in the three-dimensional topological insulator HgTe, which features topological Dirac-type surface states in a bulk gap opened by strain. Despite the co-existence of multiple carrier subsystems, the…
Lifshitz transition, a change in Fermi surface topology, is likely to greatly influence exotic correlated phenomena in solids, such as high-temperature superconductivity and complex magnetism. However, since the observation of Fermi…
Recently, ZrTe5 and HfTe5 are theoretically studied to be the most promising layered topological insulators since they are both interlayer weakly bonded materials and also with a large bulk gap in the single layer. It paves a new way for…
We present a theoretical framework to describe the integer quantum Hall effect (IQHE) in three-dimensional (3D) electron systems. This extends our previous single-electron approach, which was successfully applied to two-dimensional (2D)…
Interacting electrons confined to their lowest Landau level in a high magnetic field can form a variety of correlated states, some of which manifest themselves in a Hall effect. Although such states have been predicted to occur in three…
We systematically measured the Hall effect in the extremely large magnetoresistance semimetal WTe$_2$. By carefully fitting the Hall resistivity to a two-band model, the temperature dependencies of the carrier density and mobility for both…
The discovery of quantum Hall effect in two-dimensional (2D) electronic systems inspired the topological classifications of electronic systems1,2. By stacking 2D quantum Hall effects with interlayer coupling much weaker than the Landau…
After decades of searching for the dissipationless transport in the absence of any external magnetic field, quantum anomalous Hall effect (QAHE) was recently achieved in magnetic topological insulator (TI) films. However, the universal…
Quantum Hall effect (QHE) is a macroscopic manifestation of quantized states which only occurs in confined two-dimensional electron gas (2DEG) systems. Experimentally, QHE is hosted in high mobility 2DEG with large external magnetic field…
The Anomalous Hall Effect (AHE) is an important quantity in determining the properties and understanding the behavior of the two-dimensional electron system forming at the interface of SrTiO3-based oxide heterostructures. The occurrence of…
We report results of systematic measurements of charge transport properties of the 20.5nm wide HgTe-based quantum well in perpendicular magnetic field, performed under hydrostatic pressures up to 15.1 kbar. At ambient pressure transport is…
We present theoretical investigations of pressure and temperature driven phase transitions in HgTe quantum wells grown on CdTe buffer. Using the 8-band \textbf{k$\cdot$p} Hamiltonian we calculate evolution of energy band structure at…