Related papers: Orbital Hall effect assisted field-free perpendicu…
Recent observations of current-induced magnetization switching at ferromagnet/normal-conductor interfaces have important consequences for future magnetic memory technology. In one interpretation, the switching originates from carriers with…
We quantitatively evaluate a spin anomalous Hall effect (SAHE), generating spin angular momentum flow (spin current, $J_{\rm s}$), in an L1$\rm_{0}$-FePt ferromagnet by exploiting giant magnetoresistance devices with L1$\rm_{0}$-FePt / Cu /…
Spin Hall effect plays an essential role in generating spin current from the injected charge current, following the Dyakonov-Perel rule that the directions of charge flow, spin flow and spin polarization are mutually perpendicular to each…
Realizing deterministic current-induced spin-orbit torque (SOT) magnetization switching, especially in systems exhibiting perpendicular magnetic anisotropy (PMA), typically requires the application of a collinear in-plane field, posing a…
For deterministic magnetization switching by spin-orbit torque (SOT) in a perpendicular magnetic anisotropy system, an additional in-plane direction magnetic field is essential for deterministic switching by breaking the magnetization…
In collinear magnets lacking inversion symmetry application of electric currents induces torques on the magnetization and conversely magnetization dynamics induces electric currents. The two effects, which both rely on spin-orbit…
The spin Hall effect (SHE) is found to be strong in heavy transition metals (HM), such as Ta and W, in their amorphous and/or high resistivity form. In this work, we show that by employing a Cu-Ta binary alloy as buffer layer in an…
In ferromagnetic trilayers, a spin-orbit-induced spin current can have a spin polarization of which direction is deviated from that for the spin Hall effect. Recently, magnetization switching in ferromagnetic trilayers has been proposed and…
Spin-orbit interaction (SOI) couples charge and spin transport, enabling electrical control of magnetization. A quintessential example of SOI-induced transport is the anomalous Hall effect (AHE), first observed in 1880, in which an electric…
Understanding the mechanism driving magnetization switching in spin-orbit-torque-assisted devices remains a subject of debate. While originally attributed to the spin Hall effect and spin Rashba-Edelstein effect, recent discoveries related…
Giant spin Hall effect (GSHE) has been observed in heavy metal materials such as Ta, Pt, and W, where spins are polarized in the surface plane and perpendicular to the charge current direction. Spins generated in these materials have…
Despite recent advances in orbitronics, generating out-of-plane orbital torques essential for field-free deterministic switching of perpendicular magnetization remains a key challenge. Here, we propose a strategy to produce such…
Altermagnetism is an unconventional form of antiferromagnetism characterized by momentum-dependent spin polarization of electronic states and zero net magnetization, arising from specific crystalline symmetries. In the presence of…
Topological polaritons, combining the robustness of the topological protected edge states to defects and disorder with the strong nonlinear properties of polariton bosons, represent an excellent platform to investigate novel photonic…
In the last few years, some ideas of electric manipulations in ferromagnetic heterostructures have been proposed for developing next generation spintronic devices. Among them, the magnetization switching driven by spin-orbit torque (SOT) is…
Spin-orbitronics, based on both spin and orbital angular momentum, presents a promising pathway for energy-efficient memory and logic devices. Recent studies have demonstrated the emergence of orbital currents in light transition metals…
The integration of two-dimensional (2D) van der Waals (vdW) magnets with topological insulators or heavy metals holds great potential for realizing next-generation spintronic memory devices. However, achieving high-efficiency SOT switching…
Spin Hall effect (SHE) and voltage-controlled magnetic anisotropy (VCMA) are two promising methods for low-power electrical manipulation of magnetization. Recently, magnetic field-free switching of perpendicular magnetization through SHE…
Current-induced spin torques are of great interest to manipulate the orientation of nanomagnets without applying external magnetic fields. They find direct application in non-volatile data storage and logic devices, and provide insight into…
Type-x device attracts considerable interest in the field of spintronics due to its robust spin-orbit torque (SOT) induced magnetization switching, and easy deposition technique. However, universally applicable and straightforward detection…