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Much effort has been made to modify the properties of transition metal dichalcogenide layers via their environment as a route to new functionalization. However, it remains a challenge to induce large electronic changes without chemically…

The anisotropy of the electronic transition is an important physical property not only determining the materials' optical property, but also revealing the underlying character of the electronic states involved. Here we used…

Materials Science · Physics 2016-03-09 Jinhua Hong , Kun Li , Chuanhong Jin , Xixiang Zhang , Ze Zhang , Jun Yuan

We present an analytical investigation of the optical absorption spectrum of monolayer molybdenumdisulfide. Based on the density matrix formalism, our approach gives insights into the microscopic origin of excitonic transitions, their…

Materials Science · Physics 2014-03-24 Gunnar Berghäuser , Ermin Malic

Transition-metal dichalcogenides (TMDs) are promising for two-dimensional (2D) semiconducting devices and novel phenomena. For 2D applications, their work function, ionization energy, and electron affinity are required as a function of…

Materials Science · Physics 2021-03-16 Han-gyu Kim , Hyoung Joon Choi

Monolayer Molybdenum Disulfide (MoS2) with a direct band gap of 1.8 eV is a promising two-dimensional material with a potential to surpass graphene in next generation nanoelectronic applications. In this letter, we synthesize monolayer MoS2…

Mesoscale and Nanoscale Physics · Physics 2013-06-18 Han Liu , Mengwei Si , Sina Najmaei , Adam T. Neal , Yuchen Du , Pulickel M. Ajayan , Jun Lou , Peide D. Ye

Physics based numerical simulation has been carried out to probe the sub-gap density of states (DOS) and underlying electron transport properties of amorphous oxide based thin film transistors (TFTs). The DOS model of TFTs consists of…

Applied Physics · Physics 2024-02-15 D. Saha , Sachin Kulkarni

We study field effect transistor characteristics in etched single layer MoS2 nanoribbon devices of width 50nm with ohmic contacts. We employ a SF6 dry plasma process to etch MoS2 nanoribbons using low etching (RF) power allowing very good…

Mesoscale and Nanoscale Physics · Physics 2019-04-02 D. Kotekar-Patil , J. Deng , S. L. Wong , Chit Siong Lau , Kuan Eng Johnson Goh

In this work, we investigated the electronic structure and the quantum capacitance of the functionalized MoS$_2$ monolayer. The functionalizations have been done by using different ad-atom adsorption on Mo$S_2$ monolayer. Density functional…

Materials Science · Physics 2020-11-25 Sruthi T , Nayana Devaraj , Kartick Tarafder

The metastable 1$T'$ phase of layered transition metal dichalcogenides has recently attracted considerable interest due to electronic properties, possible topological electronic phases and catalytic activity. We report a comprehensive…

Materials Science · Physics 2018-04-13 Michele Pizzochero , Oleg V. Yazyev

Molybdenum disulfide has recently emerged as a promising two-dimensional semiconducting material for nano-electronic, opto-electronic and spintronic applications. However, demonstrating spin-transport through a semiconducting MoS2 channel…

We explore the adsorption of MoS2 on a range of metal substrates by means of first-principles density functional theory calculations. Including van der Waals forces in the density functional is essential to capture the interaction between…

Materials Science · Physics 2016-02-03 M. Farmanbar , G. Brocks

Transition metal dichalcogenides (TMDs) are a branch of two-dimensional materials which in addition to having an easy-to-exfoliate layered structure, also host semiconducting, metallic, superconducting, and topological properties in various…

Superconductivity · Physics 2023-01-25 Suvodeep Paul , Saswata Talukdar , Ravi Shankar Singh , Surajit Saha

We realize and investigate ionic liquid gated field-effect transistors (FETs) on large-area MoS2 monolayers grown by chemical vapor deposition (CVD). Under electron accumulation, the performance of these devices is comparable to that of…

Mesoscale and Nanoscale Physics · Physics 2016-02-05 Evgeniy Ponomarev , Ignacio Gutiérrez-Lezama , Nicolas Ubrig , Alberto F. Morpurgo

Transition metal dichalcogenides have recently emerged as promising two-dimensional materials with intriguing electronic properties. Existing calculations of intrinsic phonon-limited electronic transport so far have concentrated on the…

Materials Science · Physics 2017-10-05 Nicki Frank Hinsche , Kristian Sommer Thygesen

We carried out fully-atomistic reactive molecular dynamics simulations to study the elastic properties and fracture patterns of transition metal dichalcogenide (TMD) MoX2 (X=S, Se, Te) membranes, in their 2H and 1T phases, within the…

Transition-metal dichalcogenides open novel opportunities for the exploration of exciting new physics and devices. As a representative system, 2H-MoS$_2$ has been extensively investigated owing to its unique band structure with a large band…

Two-probe electronic transport measurements on a Molybdenum Disulphide (MoS_2) surface were performed at low temperature (30K) under ultra-high vacuum conditions. Two scanning tunneling microscope tips were precisely positioned in tunneling…

Mesoscale and Nanoscale Physics · Physics 2015-06-16 R. Thamankar , T. L. Yap , K. E. J. Goh , C. Troadec , C. Joachim

In the present work, the electronic and vibrational properties of both pristine V$_2$C and fully-terminated V$_2$CT$_2$ (where T = F, O, OH) 2D monolayers are investigated using density functional theory. Firstly, the atomic structures of…

Chemical Physics · Physics 2018-04-04 Aurélie Champagne , Lu Shi , Thierry Ouisse , Benoît Hackens , Jean-Christophe Charlier

The emergence of transition metal dichalcogenides (TMDs) as 2D electronic materials has stimulated proposals of novel electronic and photonic devices based on TMD heterostructures. Here we report the determination of band offsets in TMD…

Layered two-dimensional (2D) materials exhibit unique properties, expanding opportunities in material design. We investigate MX$_2$ transition metal dichalcogenides (TMDCs) (M = Mo, W; X = S, Se, Te) in homo- and heterobilayers with…

Materials Science · Physics 2025-03-13 Yu-Hsiu Lin , William P. Comaskey , Jose L. Mendoza-Cortes