Related papers: Materials for High Temperature Digital Electronics
The thermal characteristics of silicon between 15 and 300 deg K are investigated by applying a computer program on the solution of the differential heat diffusion equation. The computer model is linked to high-purity silicon through a set…
This work presents a self-heating study of a 40-nm bulk-CMOS technology in the ambient temperature range from 300 K down to 4.2 K. A custom test chip was designed and fabricated for measuring both the temperature rise in the MOSFET channel…
Inherent properties of superconducting Bi2Sr2CaCu2O8+x films, such as the high superconducting transition temperature Tc, efficient Josephson coupling between neighboring CuO layers, and fast quasiparticle relaxation dynamics, make them a…
Continuing advancements in quantum information processing have caused a paradigm shift from research mainly focused on testing the reality of quantum mechanics to engineering qubit devices with numbers required for practical quantum…
Silicon Carbide is renowned for its exceptional thermal stability, making it a crucial material for high-temperature power devices in extreme environments. While optically detected magnetic resonance in SiC has been widely studied for…
The heart of every switched mode converter consists of several switching semiconductor elements. Due to their non-ideal behaviour there are ON state and switching losses heating up the silicon chip. That heat must effectively be transferred…
The cooling of two-dimensional electrons in silicon-metal-oxide semiconductor field effect transistors is studied experimentally. Cooling to the lattice is found to be more effective than expected from the bulk electron-phonon coupling in…
Semiconductor integrated circuits operated at cryogenic temperature will play an essential role in quantum computing architectures. These can offer equivalent or superior performance to their room-temperature counterparts while enabling a…
Superconducting properties of a material, such as electron-electron interactions and the critical temperature of superconducting transition can be expressed via the effective dielectric response function of the material. Such a description…
MOSFETs based on wide band-gap semiconductors are suitable for operations at high temperature, at which additional atomic-scale processes that are benign at lower temperatures can get activated which results in device degradation. Recently…
Metallic contamination was key to the discovery of semiconductor nanowires, but today it stands in the way of their adoption by the semiconductor industry. This is because many of the metallic catalysts required for nanowire growth are not…
Silicon photonic devices fundamental to high-density wavelength-division multiplexed (DWDM) optical links and photonic switching networks, such as resonant modulators and Mach-Zehnder interferometers (MZIs), are highly sensitive to…
Silicon has dominated the microelectronics industry for the last 50 years. With its zero nuclear spin isotope (28Si) and low spin orbit coupling, it is believed that silicon can become an excellent host material for an entirely new…
High thermal conductivity electronic materials are critical components for high-performance electronic and photonic devices as either active functional materials or thermal management materials. We report an isotropic high thermal…
Fragile quantum effects such as single electron charging in quantum dots or macroscopic coherent tunneling in superconducting junctions are the basis of modern quantum technologies. These phenomena can only be observed in devices where the…
On-chip demagnetization refrigeration has recently emerged as a powerful tool for reaching microkelvin electron temperatures in nanoscale structures. The relative importance of cooling on-chip and off-chip components and the thermal…
Conventional CMOS technology operated at cryogenic conditions has recently attracted interest for its uses in low-noise electronics. We present one of the first characterizations of 180 nm CMOS technology at a temperature of 100 mK,…
Complementary-metal-oxide-semiconductor (CMOS) is the most widely spread technology for integrated circuits fabrication. Each foundry offers different technology nodes that are characterized by the minimum feature size, which is the…
We have fabricated a custom cryogenic Complementary Metal-Oxide-Semiconductor (CMOS) integrated circuit that has a higher measurement bandwidth compared with conventional room temperature electronics. This allowed implementing single shot…
The reduction of the thermal conductivity in nanostructures opens up the possibility of exploiting for thermoelectric purposes also materials such as silicon, which are cheap, available and sustainable but with a high thermal conductivity…