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We report on the simple fabrication of hysteresis-free and electrically stable organic field-effect transistors (OFETs) and inverters operating at voltages <1-2 V, enabled by the almost trap-free interface between the organic semiconductor…
Two-dimensional (2D) intrinsic superconductors with nontrivial topological band and vertical ferroelectricity exhibit fascinating characteristics to achieving electrostatic control of quantum phases. While, only a few such 2D materials have…
We present a quantitative theory of the gate-voltage tuned superconductor-to-insulator transition (SIT) observed experimentally in the 2D electron liquid created in the (111) interface between crystalline SrTiO_3 and LaAlO_3 . Considering…
Low power consumption in both static and dynamic modes of operation is a key requirement in modern, highly scaled nanoelectronics. Tunneling field-effect transistors (TFETs) that exploit direct band-to-band tunneling of charges and exhibit…
High-quality dielectric films are essential for fabricating advanced electronic devices, but their direct deposition often degrades the films and their underlying interfaces, which compromises device performance, especially on sensitive or…
The epitaxial growth of multifunctional oxides on semiconductors has opened a pathway to introduce new functionalities to semiconductor device technologies. In particular, ferroelectric materials integrated on semiconductors could lead to…
Manipulating the superconducting states of high-T_c cuprate superconductors in an efficient and reliable way is of great importance for their applications in next-generation electronics. Traditional methods are mostly based on a…
Field-effect transistors (FETs) with non-covalently functionalised molybdenum disulfide (MoS2) channels grown by chemical vapour deposition (CVD) on SiO2 are reported. The dangling-bond-free surface of MoS2 was functionalised with a…
Two-dimensional (2D) transition metal dichalcogenides (TMDs) such as molybdenum disulfide (MoS2) have been intensively investigated because of their exclusive physical properties for advanced electronics and optoelectronics. In the present…
InAs on Insulator (InAsOI) has been recently demonstrated as a promising platform to develop hybrid semiconducting-superconducting Josephson Junctions (JJs) and Josephson Field Effect Transistors (JoFETs). The InAsOI consists of an InAs…
When thinned down to the atomic scale, many layered van der Waals materials exhibit an interesting evolution of their electronic properties, whose main aspects can be accounted for by changes in the single-particle band structure. Phenomena…
The recent progress in nanosheet transistors has established two-dimensional (2D) semiconductors as viable candidates for future ultra-scaled electronic devices. Next to reducing contact resistance, identifying good gate dielectrics is a…
Due to stringent thermal budgets in cryogenic technologies such as superconducting quantum computers and sensors, minimizing the energy dissipation and power consumption of cryogenic electronic components is pivotal for large-scale devices.…
We explore solid electrolytes for electrostatic gating using field-effect transistors (FETs) in which thin WSe$_2$ crystals are exfoliated and transferred onto a lithium-ion conducting glass ceramic substrate. For negative gate voltages…
Recently, superconductivity was discovered at very low densities in slightly misaligned graphene multilayers. Surprisingly, despite extremely low electronic density (about $10^{-4}$ electrons per unit cell), these systems realize…
Excellent gate electrostatics in field effect transistors (FETs) based on two-dimensional transition metal dichalcogenide (2D TMD) channels can dramatically decrease static power dissipation. Energy efficient FETs operate in enhancement…
We investigate transport through ionic liquid gated field effect transistors (FETs) based on exfoliated crystals of semiconducting WS$_2$. Upon electron accumulation, at surface densities close to -or just larger than- 10$^{14}$ cm$^{-2}$,…
Correlated electron systems are among the centerpieces of modern condensed matter sciences, where many interesting physical phenomena, such as metal-insulator transition and high-Tc superconductivity appear. Recent efforts have been focused…
A simple and robust electrode insulation technique that can withstand a voltage as high as $\mathrm{1000~V}$, which is equivalent to an electric field strength of $\sim 1MV/m$ across a $\mathrm{10~\mu m}$ channel filled with an electrolyte…
We investigate the design of steep-slope metal-oxide-semiconductor field-effect transistors (MOSFETs) exploiting monolayers of transition metal dihalides as channel materials. With respect to other previously proposed steep-slope…