Related papers: Harnessing Interlayer Magnetic Coupling for Effici…
The large spin orbit coupling in topological insulators results in helical spin-textured Dirac surface states that are attractive for topological spintronics. These states generate an efficient spin-orbit torque on proximal magnetic moments…
Spintronics is concerned with replacing charge current with current of spin, the electron's intrinsic angular momentum. In magnetic insulators, spin currents are carried by magnons, the quanta of spin-wave excitations on top of the…
Reducing energy dissipation while increasing speed in computation and memory is a long-standing challenge for spintronics research. In the last 20 years, femtosecond lasers have emerged as a tool to control the magnetization in specific…
Antiferromagnetic transition metal oxides are an established and widely studied materials system in the context of spin-based electronics, commonly used as passive elements in exchange bias-based memory devices. Currently, major interest…
Helical metals realized at the surfaces of topological insulators have recently attracted wide attention due to their potential applications in spintronics. In this paper we propose to realize helical metals through the application of THz…
Coupling between conduction electrons and localized magnetization is responsible for a variety of phenomena in spintronic devices. This coupling enables to generate spin currents from dynamical magnetization. Due to the nonlinearity of…
Voltage control of interfacial magnetism has been greatly highlighted in spintronics research for many years, as it might enable ultra-low power technologies. Among few suggested approaches, magneto-ionic control of magnetism has…
The spin-orbit torque, a torque induced by a charge current flowing through the heavy-metal conducting layer with strong spin-orbit interactions, provides an efficient way to control the magnetization direction in heavy-metal/ferromagnet…
Recent studies on the magneto-transport properties of topological insulators (TI) have attracted great attention due to the rich spin-orbit physics and promising applications in spintronic devices. Particularly the strongly spin-moment…
Magnetic heterostructures that combine large spin-orbit torque efficiency, perpendicular magnetic anisotropy, and low resistivity are key to develop electrically-controlled memory and logic devices. Here we report on vector measurements of…
Coupling of the spin and orbital degrees of freedom on the surface of a strong three-dimensional insulator, on the one hand, and textured magnetic configuration in an adjacent ferromagnetic film, on the other, is studied using a combination…
The orbital Hall effect, which does not rely on the spin-orbit coupling, has recently emerged as a promising mechanism for electrically manipulating magnetization in thin-film ferromagnets. Despite its potential, direct experimental…
Two-dimensional (2D) materials provide a platform for developing novel spintronic devices and circuits for low-power electronics. In particular, inducing magnetism and injecting spins in graphene have promised the emerging field of graphene…
We investigate the current induced magnetization dynamics and magnetization switching in an unconventional p-wave superconductor sandwiched between two misaligned ferromagnetic layers by numerically solving Landau-Lifshitz-Gilbert equation…
Electric-field control of magnetization dynamics is fundamentally and technologically important for future spintronic devices. Here, based on electric-field control of both magnetic anisotropy and spin--orbit torque, two distinct methods…
We explore the possibility of exciting spin waves in insulating antiferromagnetic films by injecting spin current at the surface. We analyze both magnetically compensated and uncompensated interfaces. We find that the spin current induced…
In this work, we study magnetization switching induced by spin-orbit torque in W(Pt)/Co/NiO heterostructures with variable thickness of heavy-metal layers W and Pt, perpendicularly magnetized Co layer and an antiferromagnetic NiO layer.…
Exploiting 2D materials for spintronic applications can potentially realize next-generation devices featuring low-power consumption and quantum operation capability. The magnetic exchange field (MEF) induced by an adjacent magnetic…
Transition metal compounds with the $(t_{2g})^4$ electronic configuration are expected to be nonmagnetic atomic singlets both in the weakly interacting regime due to spin-orbit coupling, as well as in the Coulomb dominated regime with…
Current induced magnetization switching by spin-orbit torques offers an energy-efficient means of writing information in heavy metal/ferromagnet (FM) multilayer systems. The relative contributions of field-like torques and damping-like…