Related papers: Optimum surface-passivation schemes for near-surfa…
While Si clathrates have been explored as promising direct bandgap semiconductors, their practical optoelectronic performance has been limited by high doping levels and structural defects. Hydrogen has long been used to improve the…
Integrating solid-state spin defects into classical electronic devices can enable new opportunities for quantum information processing that benefit from existing semiconductor technology. We show, through bias control of an isotopically…
We show that implementations for quantum sensing with exceptional sensitivity and spatial resolution can be made using spin-3/2 semiconductor defect states. We illustrate this using the silicon monovacancy deep center in hexagonal SiC based…
Solid-state qubits with a photonic interface is very promising for quantum networks. Color centers in silicon carbide have shown excellent optical and spin coherence, even when integrated with membranes and nano-structures. Additionally,…
Progress with quantum technology has for a large part been realized with the nitrogen-vacancy centre in diamond. Part of its properties, however, are nonideal and this drives research into other spin-active crystal defects. Several of these…
Control of local lattice perturbations near optically-active defects in semiconductors is a key step to harnessing the potential of solid-state qubits for quantum information science and nanoscale sensing. We report the development of a…
Their outstanding electrical and optical properties make semiconducting single-walled carbon nanotubes (SWCNTs) highly suitable for charge transport and emissive layers in near-infrared optoelectronic devices. However, the luminescence…
Group IV vacancy color centers in diamond are promising spin-photon interfaces with strong potential for applications for photonic quantum technologies. Reliable methods for controlling and stabilizing their charge state are urgently needed…
The photosensitivity of silicon is inherently very low in the visible electromagnetic spectrum, and it drops rapidly beyond 800 nm in near-infrared wavelengths. Herein, we have experimentally demonstrated a technique utilizing…
Defects with associated electron and nuclear spins in solid-state materials have a long history relevant to quantum information science going back to the first spin echo experiments with silicon dopants in the 1950s. Since the turn of the…
Color centers in silicon are emerging as promising platforms for quantum technologies. Among them, the G center has attracted considerable interest owing to its bright telecom O-band single-photon emission and its optically addressable…
We studied the influence of defect states on the laser excitation process in silicon using time-dependent density functional theory. We assumed two types of point defects: interstitial oxygen and silicon vacancies. We found that the…
Patterning the front side of an ultra-thin crystalline silicon (c Si) solar cell helps keeping the energy conversion efficiency high by compensating for the light absorption losses. A super-Gaussian mathematical expression was used in order…
Spin-photon interfaces based on solid-state atomic defects have enabled a variety of key applications in quantum information processing. To maximize the light-matter coupling strength, defects are often placed inside nanoscale devices.…
Optically accessible solid state defect spins serve as a primary platform for quantum information processing, where precise control of the electron spin and ancillary nuclear spins is essential for operation. Using the nitrogen-vacancy (NV)…
To make practical quantum algorithms work, large-scale quantum processors protected by error-correcting codes are required to resist noise and ensure reliable computational outcomes. However, a major challenge arises from defects in…
A new type of effective atomic pseudopotential for passivation of semiconductor surfaces is presented. It is shown that the spherical approximation used in the effective and empirical pseudopotential methods is not suitable for describing…
We show that electron correlations control the photophysics of defects in SiC through both renormalization of the quasiparticle bandstructure and exciton effects. We consider the carbon vacancy, which is a well-identified defect with two…
Silicon Carbide (SiC) demonstrates significant potential for high-energy particle detection in complex radiation environments due to its exceptional radiation resistance, excellent environmental adaptability, and fast response time.…
Quantum systems combining indistinguishable photon generation and spin-based quantum information processing are essential for remote quantum applications and networking. However, identification of suitable systems in scalable platforms…