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Resistive Random Access Memory (RRAM) is an emerging device for processing-in-memory (PIM) architecture to accelerate convolutional neural network (CNN). However, due to the highly coupled crossbar structure in the RRAM array, it is…

RRAM-based in-Memory Computing is an exciting road for implementing highly energy efficient neural networks. This vision is however challenged by RRAM variability, as the efficient implementation of in-memory computing does not allow error…

As data-intensive applications increasingly strain conventional computing systems, processing-in-memory (PIM) has emerged as a promising paradigm to alleviate the memory wall by minimizing data transfer between memory and processing units.…

Spiking recurrent neural networks (RNNs) are a promising tool for solving a wide variety of complex cognitive and motor tasks, due to their rich temporal dynamics and sparse processing. However training spiking RNNs on dedicated…

At the end of Silicon roadmap, keeping the leakage power in tolerable limit and bridging the bandwidth gap between processor and memory have become some of the biggest challenges. Several promising Non-Volatile Memories (NVMs) such as,…

Binary matrix-vector multiplication (BMVM) is a key operation in post-quantum cryptography schemes like the Classic McEliece cryptosystem. Conventional computing architectures incur significant energy efficiency loss due to data movement of…

The objective of this study is to illustrate the process of training a Deep Neural Network (DNN) within a Resistive RAM (ReRAM) Crossbar-based simulation environment using CrossSim, an Application Programming Interface (API) developed for…

Non-volatile memory (NVM) has the potential to disrupt the boundary between memory and storage, including the abstractions that manage this boundary. Researchers comparing the speed, durability, and abstractions of hybrid systems with DRAM,…

The maximum achievable rate is derived for resistive random-access memory (ReRAM) channel with sneak path interference. Based on the mutual information spectrum analysis, the maximum achievable rate of ReRAM channel with independent and…

We demonstrate the first hardware implementation of an oscillatory neural network (ONN) utilizing resistive memory (ReRAM) for coupling elements. A ReRAM crossbar array chip, integrated into the Back End of Line (BEOL) of CMOS technology,…

This paper investigates the relationship between mapping style and device roadmap in Resistive Random Access Memory (ReRAM) architectures for neuromorphic computing. The study leverages simulations using DNN+NeuroSim to evaluate the impact…

Memristors are promising devices for scalable and low power, in-memory computing to improve the energy efficiency of a rising computational demand. The crossbar array architecture with memristors is used for vector matrix multiplication…

Neuromorphic architectures mimicking biological neural networks have been proposed as a much more efficient alternative to conventional von Neumann architectures for the exploding compute demands of AI workloads. Recent neuroscience theory…

This paper presents a simulation platform, namely CIMulator, for quantifying the efficacy of various synaptic devices in neuromorphic accelerators for different neural network architectures. Nonvolatile memory devices, such as resistive…

Resistive random access memory (ReRAM)-based processing-in-memory (PIM) architectures have demonstrated great potential to accelerate Deep Neural Network (DNN) training/inference. However, the computational accuracy of analog PIM is…

Resistive random access memories (RRAM) are novel nonvolatile memory technologies, which can be embedded at the core of CMOS, and which could be ideal for the in-memory implementation of deep neural networks. A particularly exciting vision…

Magnetic random access memory (MRAM) is a leading emergent memory technology that is poised to replace current non-volatile memory technologies such as eFlash. However, the scaling of MRAM technologies is heavily affected by…

Resistive memories (RRAM) are promising candidates for replacing present nonvolatile memories and realizing storage class memories; hence resistance switching devices are of particular interest. These devices are typically memristive, with…

Maintaining benefits of CMOS technology scaling is becoming challenging due to increased manufacturing complexities and unwanted passive power dissipations. This is particularly challenging in SRAM, where manufacturing precision and leakage…

Verification of binary neural network (BNN) robustness is NP-hard, as it can be formulated as a combinatorial search for an adversarial perturbation that induces misclassification. Exact verification methods therefore scale poorly with…