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Related papers: Intervalence Plasmons in Boron-Doped Diamond

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In a recent X-ray absorption study in boron doped diamond, Nakamura et al. have seen a well isolated narrow boron impurity band in non-superconducting samples and an additional narrow band at the chemical potential in a superconducting…

Strongly Correlated Electrons · Physics 2007-05-23 G. Baskaran

Diamond, a well-known wide-bandgap insulator, becomes a low-temperature superconductor upon substitutional doping of carbon with boron. However, limited boron solubility and significant lattice disorder introduced by boron doping prevent…

Mesoscale and Nanoscale Physics · Physics 2022-07-05 Erik Piatti , Alberto Pasquarelli , Renato S. Gonnelli

Electron tunneling experiments are used to probe Coulomb correlation effects in the single-particle density-of-states (DOS) of boron-doped silicon crystals near the critical density of the metal-insulator transition (MIT). At low energies,…

Disordered Systems and Neural Networks · Physics 2014-11-20 Mark Lee , J. G. Massey , V. L. Nguyen , B. I. Shklovskii

Secondary Ions Mass Spectroscopy and Hall effect measurements were performed on boron doped silicon with concentration between 0.02 at.% and 12 at.%. Ultra-high boron doping was made by saturating the chemisorption sites of a Si wafer with…

We study the plasmonic properties of coupled noble-metal nanochains in the case of different number of coupled chains and doping by different transition-metal (TM) atoms within the time-dependent density-functional theory (TDDFT) approach.…

Mesoscale and Nanoscale Physics · Physics 2014-09-12 Neha Nayyar , Volodymyr Turkowski , Talat S. Rahman

Doping in transition metal dichalcogenide (TMD) monolayers provides a powerful method to precisely tailor their electronic, optical, and catalytic properties for advanced technological applications, including optoelectronics, catalysis, and…

Motivated by the discovery of superconductivity in boron-doped (B-doped) diamond, we investigate the localization and superconductivity in heavily doped semiconductors. The competition between Anderson localization and s-wave…

Superconductivity · Physics 2009-11-13 Youichi Yanase , Naoyuki Yorozu

Recent experimental findings show that the pairing interaction in hole-doped cuprates resides in the nodal (FS arcs) region accompanied by the separate antinodal pseudogap. A corresponding multiband model of cuprate superconductivity is…

Superconductivity · Physics 2009-09-11 N. Kristoffel , P. Rubin

Heavily-doped semiconductor films are very promising for application in mid-infrared plasmonic devices because the real part of their dielectric function is negative and broadly tunable in this wavelength range. In this work we investigate…

Among their amazing properties, graphene and related low-dimensional materials show quantized charge-density fluctuations--known as plasmons--when exposed to photons or electrons of suitable energies. Graphene nanoribbons offer an enhanced…

Strongly Correlated Electrons · Physics 2016-09-14 Cristian Vacacela Gomes , Michele Pisarra , Mario Gravina , Jose M. Pitarke , Antonello Sindona

The role of doping in tailoring thermal transport in semiconductors is critical for efficient thermal management in electronic devices. While the effects of doping have been extensively studied to tune electrical properties, its impact on…

Materials Science · Physics 2025-04-30 Zifeng Huang , Jianbo Liang , Yuxiang Wang , Zixuan Sun , Naoteru Shigekawa , Ming Li , Runsheng Wang , Zhe Cheng

Modeling of radiation-enhanced diffusion of boron and phosphorus atoms during irradiation of silicon substrates respectively with high- and low-energy protons was carried out. The results obtained confirm the previously arrived conclusion…

Materials Science · Physics 2014-07-15 Oleg Velichko

Different phases of solid boron under high pressure are studied by first principles calculations. The $\alpha$-B$_{12}$ structure is found to be stable up to 270 GPa. Its semiconductor band gap (1.72 eV) decreases continuously to zero…

Materials Science · Physics 2009-11-07 Jijun Zhao , Jian Ping Lu

In this letter, we report the effects of irradiating hydrogen-terminated diamond surfaces with protons. We study the electrical behavior of the two-dimensional hole gas that forms on the diamond surface as a result of hydrogen-termination.…

The development of nanoscale nonlinear elements in photonic integrated circuits is hindered by the physical limits to the nonlinear optical response of dielectrics, which requires that the interacting waves propagate in transparent volumes…

Using first principles calculations, this work investigates the suitability of diamond/c-BN heterojunctions for high frequency, high power device applications. The key quantities of band offsets and interface charge polarization are…

Materials Science · Physics 2023-10-12 Jeffrey T. Mullen , James A. Boulton , Minghao Pan , Ki Wook Kim

We study the effect of doping on the electron-phonon interaction and on the phonon frequencies in doped semiconductors, taking into account the screening in presence of free carriers at finite temperature. We study the impact of screening…

Materials Science · Physics 2025-06-10 Francesco Macheda , Paolo Barone , Francesco Mauri

The control over material properties attainable through molecular doping is essential to many technological applications of organic semiconductors, such as OLED or thermoelectrics. These excitonic semiconductors typically reach the…

Materials Science · Physics 2021-07-14 Massimiliano Comin , Simone Fratini , Xavier Blase , Gabriele D'Avino

Diamond has outstanding physical properties: the hardest known material, a wide band gap, the highest thermal conductivity, and a very high Debye temperature. In 2004, Ekimov et al. discovered that heavily boron-doped (B-doped) diamond…

Electrical conductivity of a highly boron doped chemical vapor deposited diamond thin film has been studied at different temperatures under high electric field conditions. Current-voltage characteristics have been measured using pulsed…

Materials Science · Physics 2012-10-04 Vincent Mortet , A. Soltani
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