Related papers: Rubidium and cesium ion-induced electron and ion s…
Several ion source alternatives for current focused ion beam (FIB) systems have been studied to achieve higher brightness, including cold atom ion sources. However, a study of ultracold ions interacting with often used materials is seldom…
This work presents characterization of focused ion beam induced deposition (FIBID) of platinum using both rubidium and gallium ions. Under similar beam energies, 8.5 keV for Rb$^+$ and 8.0 keV for Ga$^+$, and beam current near 10 pA, the…
Cold atom ion sources have been developed and commercialized as alternative sources for focused ion beams (FIB). So far, applications and related research have not been widely reported. In this paper, a prototype rubidium FIB is used to…
In a focused ion beam (FIB) microscope, source particles interact with a small volume of a sample to generate secondary electrons that are detected, pixel by pixel, to produce a micrograph. Randomness of the number of incident particles…
In the sealed-off cesium vapor cell studied in this work, a residual rubidium fraction of approximately $\sim$1\% was observed. We investigate the optical response of these trace Rb atoms in a sealed 1~cm long Cs-filled vapor cell. Despite…
Focused ion beams (FIBs) are widely used in nanofabrication for applications such as circuit repair, ultra-thin lamella preparation, strain engineering, and quantum device prototyping. Although the lateral spread of the ion beam is often…
Nanoscale focused ion beams (FIBs) represent one of the most useful tools in nanotechnology, enabling nanofabrication via milling and gas-assisted deposition, microscopy and microanalysis, and selective, spatially resolved doping of…
Focussed Ion Beam (FIB) milling is a mainstay of nano-scale machining. By manipulating a tightly focussed beam of energetic ions, often gallium (Ga+), FIB can sculpt nanostructures via localised sputtering. This ability to cut solid matter…
The focused ion beam (FIB) is a powerful tool for the fabrication, modification and characterization of materials down to the nanoscale. Starting with the gallium FIB, which was originally intended for photomask repair in the semiconductor…
A new methodology for fundamental studies of radiation effects in solids is herein introduced by using a plasma Focused Ion Beam (PFIB). The classical example of ion-induced amorphization of single-crystalline pure Si is used as a…
Recent studies of secondary electron (SE) emission in scanning transmission electron microscopes suggest that material's properties such as electrical conductivity, connectivity, and work function can be probed with atomic scale resolution…
The Ion Beam Induced Charge (IBIC) technique is widely used to characterize the electronic properties of semiconductor materials and devices. Its main advantage over other charge collection microscopies stems in the use of MeV ion probes,…
A two-step photoionization strategy of an ultracold rubidium beam for application in a focused ion beam instrument is analyzed and implemented. In this strategy the atomic beam is partly selected with an aperture after which the transmitted…
Focused ion beams (FIBs) are widely used to modify optoelectronic devices, but their utility is severely restricted in some III-V materials due to adverse effects such as nanofibre growth and contamination. This study describes an effective…
We demonstrate a prototype of a Focused Ion Beam machine based on the ionization of a laser-cooled cesium beam adapted for imaging and modifying different surfaces in the few-tens nanometer range. Efficient atomic ionization is obtained by…
Focused Ion Beam (FIB) processing has been established as a well-suited and promising technique in R&D in nearly all fields of nanotechnology for patterning and prototyping on the micro and nanometer scale and below. Among other concepts,…
We studied the influence of 30keV Ga$^+$-ions -- commonly used in focused ion beam (FIB) devices -- on the transport properties of thin crystalline graphite flake, La$_{0.7}$Ca$_{0.3}$MnO$_3$ and Co thin films. The changes of the electrical…
A study of damages caused by gallium focused ion beam (FIB) into III-V compounds is presented. Potential damages caused by local heating, ion implantation, and selective sputtering are presented. Preliminary analysis shows that local…
Deterministic placement of single dopants is essential for scalable quantum devices based on group-V donors in silicon. We demonstrate a non-destructive, high-efficiency method for detecting individual ion implantation events using…
Two-photon ionization of Rubidium atoms in a magneto-optical trap and a Bose-Einstein condensate (BEC) is experimentally investigated. Using 100 ns laser pulses, we detect single ions photoionized from the condenstate with a 35(10)%…