Related papers: Orbital torque switching in perpendicularly magnet…
Electrical manipulation of magnetization by spin-orbit torque (SOT) has shown promise for realizing reliable magnetic memories and oscillators. To date, the generation of transverse spin current and SOT, whether it is of spin Hall effect…
Efficient spin/charge interconversion is desired to develop innovative spin-based devices. So far, the interconversion has been performed by using heavy atomic elements, strong spin-orbit interaction of which realizes the interconversion…
State-of-the-art developments in magnetic devices rely on manufacturing faster, more efficient memory elements. A significant development in this direction has been the discovery of orbital torques, which employ the orbital angular momentum…
Controlling/storing information carriers, such as electron charge and spin, is key for modern information society, and significant efforts have been paid made to establish novel technologies at the nanoscale. The rise of Si-based…
The orbital Hall effect provides an alternative means to the spin Hall effect to convert a charge current into a flow of angular momentum. Recently, compelling signatures of orbital Hall effects have been identified in 3d transition metals.…
We report a comprehensive experimental investigation of orbital-to-charge conversion in metallic and semiconductor materials, emphasizing the fundamental roles of the inverse orbital Hall effect (IOHE) and the inverse orbital Rashba effect.…
We study inverse spin and orbital Hall effects in 19 transition metals using spin-pumping driven by ferromagnetic resonance. Spin-to-charge conversion was measured in YIG/X(5), while orbital-to-charge conversion was probed in YIG/Pt(2)/X(5)…
Recent discovery of orbital currents in several material platforms including light element metals has opened new possibilities for exploring novel transport phenomena and applications to spin-orbitronic devices. These orbital currents,…
Despite the potential advantages of information storage in antiferromagnetically coupled materials, it remains unclear whether one can control the magnetic moment orientation efficiently because of the cancelled magnetic moment. Here, we…
Spin-orbit torque (SOT) can be used to efficiently manipulate the magnetic state of magnetic materials, which is an essential element for memory and logic applications. Due to symmetry constraints, only in-plane spins can be injected into…
While tremendous work has gone into spin-orbit torque and spin current generation, charge-to-spin conversion efficiency remains weak in silicon to date, generally stemming from the low spin-orbit coupling (low atomic number, Z) and lack of…
It has been shown that the spin Hall effect from heavy transition metals can generate sufficient spin-orbit torque and further produce current-induced magnetization switching in the adjacent ferromagnetic layer. However, if the…
We report unambiguously experimental evidence of a strong orbital current in Nb films with weak spin-orbit coupling via the spin-torque ferromagnetic resonance (ST-FMR) spectrum for Fe/Nb and Co/Nb bilayers. The sign change of the…
The orbital angular momentum is a core ingredient of orbital magnetism, spin Hall effect, giant Rashba spin splitting, orbital Edelstein effect, and spin-orbit torque. However, its experimental detection is tricky. In particular, direct…
Orbital angular momentum has recently emerged as an important carrier of angular momentum in solids, offering new pathways for spin orbitronic functionality beyond conventional spin transport. Here, we investigate the orbital Hall effect…
Spin-orbit torques (SOTs) generated through the conventional spin Hall effect (SHE) and/or Rashba-Edelstein effect offer potential for magnetization manipulation. However, deterministic switching of perpendicular ferromagnets via SOTs…
Spin-orbit torque manifested as an accumulated spin-polarized moment at nonmagnetic normal metal, and ferromagnet interfaces is a promising magnetization switching mechanism for spintronic devices. To fully exploit this in practice,…
The orbital Hall effect (OHE) has attracted significant attention for developing energy-efficient electronic devices. However, utilizing it in fast, low-power devices requires an enhanced understanding of underlying extrinsic and intrinsic…
The utilization of terahertz (THz) emission spectroscopy in femtosecond photoexcited spintronic heterostructures has emerged as a versatile tool for investigating ultrafast spin-transport in a noncontact and non-invasive manner. However,…
Recent findings in orbitronics pointed out large current-induced torques originating, in the current understanding, from incident orbital currents. These are generated by orbital Rashba-Edelstein effect (OREE) produced at the interface…