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Semiconductor spin qubits may show significant device-to-device variability in the presence of spin-orbit coupling mechanisms. Interface roughness, charge traps, layout or process inhomogeneities indeed shape the real space wave functions,…

Mesoscale and Nanoscale Physics · Physics 2022-02-09 Biel Martinez , Yann-Michel Niquet

Hole spin qubits in Ge/GeSi heterostructures benefit from the clean environment of epitaxial interfaces and from the intrinsic spin-orbit coupling that enables efficient electrical control, which makes them promising candidates for quantum…

Mesoscale and Nanoscale Physics · Physics 2026-03-02 Biel Martinez , Yann-Michel Niquet

Properties of quantum dot based spin qubits have significant inter-device variability due to unavoidable presence of various types of disorder in semiconductor nanostructures. A significant source of this variability is charge disorder at…

Mesoscale and Nanoscale Physics · Physics 2025-11-20 Saeed Samadi , Łukasz Cywiński , Jan A. Krzywda

A scalable spin-based quantum processor requires a suitable semiconductor heterostructure and a gate design, with multiple alternatives being investigated. Characterizing such devices experimentally is a demanding task, with the full…

Mesoscale and Nanoscale Physics · Physics 2022-08-04 Sathish R. Kuppuswamy , Hugo Kerstens , Chun-Xiao Liu , Lin Wang , Anton Akhmerov

Hole spins in Ge/SiGe heterostructure quantum dots have emerged as promising qubits for quantum computation. The strong spin-orbit coupling (SOC), characteristic of heavy-hole states in Ge, enables fast and all-electrical qubit control.…

Mesoscale and Nanoscale Physics · Physics 2025-02-12 L. Massai , B. Hetényi , M. Mergenthaler , F. J. Schupp , L. Sommer , S. Paredes , S. W. Bedell , P. Harvey-Collard , G. Salis , A. Fuhrer , N. W. Hendrickx

Silicon offers an attractive material platform for hardware realization of quantum computing. In this study, a microscopic stochastic simulation method is developed to model the effect of random interface charge traps in silicon…

Quantum Physics · Physics 2020-11-12 Tong Wu , Jing Guo

Spins of electrons in CMOS quantum dots combine exquisite quantum properties and scalable fabrication. In the age of quantum technology, however, the metrics that crowned Si/SiO2 as the microelectronics standard need to be reassessed with…

Gate-layouts of spin qubit devices are commonly adapted from previous successful devices. As qubit numbers and the device complexity increase, modelling new device layouts and optimizing for yield and performance becomes necessary.…

Nanofabricated metal gate electrodes are commonly used to confine and control electrons in electrostatically defined quantum dots. However, these same gates impart strain-induced potential fluctuations that can potentially impair device…

Mesoscale and Nanoscale Physics · Physics 2025-10-03 Collin C. D. Frink , Talise Oh , E. S. Joseph , Merritt P. Losert , E. R. MacQuarrie , Benjamin D. Woods , M. A. Eriksson , Mark Friesen

Silicon quantum dot spin qubits have become a promising platform for scalable quantum computing because of their small size and compatibility with industrial semiconductor manufacturing processes. Although Si/SiGe heterostructures are…

In recent advancements of quantum computing utilizing spin qubits, it has been demonstrated that this platform possesses the potential for implementing two-qubit gates with fidelities exceeding 99.5%. However, as with other qubit platforms,…

Quantum Physics · Physics 2024-03-20 Irina Heinz , Adam R. Mills , Jason R. Petta , Guido Burkard

The design of scalable quantum computers will benefit from predictive models for qubit performance that consider the design and layout of the qubit devices. This approach, has recently been adopted for superconducting qubits, but has…

Mesoscale and Nanoscale Physics · Physics 2022-09-27 A Ciocoiu , M Khalifa , J Salfi

Achieving uniform and scalable control of semiconductor spin qubits remains a key challenge for large scale quantum computing. In this work, we investigate how gate oxide thickness influences uniformity in dense two dimensional silicon…

The prospect of achieving fault-tolerant quantum computing with semiconductor spin qubits in Si/SiGe heterostructures relies on the integration of a large number of identical devices, a feat achievable through a scalable (Bi)CMOS…

The notoriously low and fluctuating valley splitting is one of the key challenges for electron spin qubits in silicon (Si), limiting the scalability of Si-based quantum processors. In silicon-germanium (SiGe) heterostructures, the problem…

Mesoscale and Nanoscale Physics · Physics 2025-12-23 Abel Thayil , Lasse Ermoneit , Lars R. Schreiber , Thomas Koprucki , Markus Kantner

Spin qubits in Silicon quantum dots can have long coherence times, yet their manipulation relies on the exchange interaction, through which charge noise can induce decoherence. Charge traps near the interface of a Si heterostructure lead to…

Mesoscale and Nanoscale Physics · Physics 2015-05-13 Dimitrie Culcer , Xuedong Hu , S. Das Sarma

Due to presence of magnetic field gradient needed for coherent spin control, dephasing of single-electron spin qubits in silicon quantum dots is often dominated by $1/f$ charge noise. We investigate theoretically fluctuations of ground…

Mesoscale and Nanoscale Physics · Physics 2024-08-09 Marcin Kępa , Niels Focke , Łukasz Cywiński , Jan. A. Krzywda

The spin of an electron confined in semiconductor quantum dots is currently a promising candidate for quantum bit (qubit) implementations. Taking advantage of existing CMOS integration technologies, such devices can offer a platform for…

Recent advances in coherent conveyor-mode spin qubit shuttling are paving the way for large-scale quantum computing platforms with qubit connectivity achieved by spin qubit shuttles. We developed a simulation tool to investigate numerically…

Mesoscale and Nanoscale Physics · Physics 2025-12-04 Nils Ciroth , Arnau Sala , Ran Xue , Lasse Ermoneit , Thomas Koprucki , Markus Kantner , Lars R. Schreiber

A wide variety of experimental results and theoretical investigations in recent years have convincingly demonstrated that several transition metal oxides and other materials, have dominant states that are not spatially homogeneous. This…

Strongly Correlated Electrons · Physics 2009-11-11 Elbio Dagotto
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