Related papers: Mitigating variability in epitaxial-heterostructur…
The coherence and fidelity of quantum dot (QD) spin qubits are fundamentally limited by charge noise arising from electrically active trap states at oxide interfaces, heterostructure boundaries, and within the bulk semiconductor. These…
Extensive theoretical and experimental work has established high-fidelity electron shuttling in Si/SiGe systems, whereas demonstrations in Si/SiO2 (SiMOS) remain at an early stage. To help address this, we perform full 3D simulations of…
Scalable fault-tolerant quantum computer architectures require quantum gates that operate within a small fraction of the qubit decoherence time and with high accuracy over a bandwidth set by the decoherence rate. Electron spin quantum bits…
The performance and scalability of silicon spin qubits depend directly on the value of the conduction band valley splitting. In this work, we investigate the influence of electromagnetic fields and the interface width on the valley…
Fluctuations of electric fields can change the position of a gate-defined quantum dot in a semiconductor heterostructure. In the presence of magnetic field gradient, these stochastic shifts of electron's wavefunction lead to fluctuations of…
Gate bias stress instability in organic field-effect transistors (OFETs) is a major conceptual and device issue. This effect manifests itself by an undesirable shift of the transfer characteristics and is associated with long term charge…
Scaling up quantum computing hardware is hindered by the narrow operating margins of current quantum components. Here, we introduce a composite qubit and gate scheme that achieves wide margins by use of transistor-like nonlinearities to…
Exchange coupled {\it spin} qubits in semiconductor nanostructures are shown to be vulnerable to dephasing caused by {\it charge noise} invariably present in the semiconductor environment. This decoherence of exchange gate by environmental…
We study 95 split gates of different size on a single chip using a multiplexing technique. Each split gate defines a one-dimensional channel on a modulation-doped GaAs/AlGaAs heterostructure, through which the conductance is quantized. The…
In complex transition metal oxide heterostructures of physically dissimilar perovskite compounds, interface phenomena can lead to novel physical properties not observed in either of their constituents. This remarkable feature opens new…
Amorphous semiconductors are important channel semiconductors in thin film transistors (TFTs) which serve not only active-matrix displays, but also flexible electronics for Internet of Things (IoT) applications. Nevertheless, a great…
Metal/semiconductor interfaces govern the operation of semiconductor devices through the formation of charge injection barriers that can be controlled by tuning the metal work function. However, the controlling ability is typically limited…
Designing molecular organic semiconductors with distinct frontier orbitals is key for the development of devices with desirable properties. Generating defined organic nanostructures with atomic precision can be accomplished by on-surface…
The small footprint of semiconductor qubits is favourable for scalable quantum computing. However, their size also makes them sensitive to their local environment and variations in gate structure. Currently, each device requires tailored…
Electron shuttling is emerging as a key enabler of scalable silicon spin-qubit quantum computing, but fidelities are limited by atomistic disorder. We introduce a multiscale simulation framework combining time-dependent finite-element…
Hole spins in silicon or germanium quantum dots have emerged as a compelling solid-state platform for scalable quantum processors. Besides relying on well-established manufacturing technologies, hole-spin qubits feature fast,…
Heterostructures of topological insulator Bi$_2$Se$_3$ on transition metal dichalcogenides (TMDCs) offer a new materials platform for studying novel quantum states by exploiting the interplay among topological orders, charge orders and…
The unavoidable effect of the environmental noise due to nuclear spins and charge traps is included in the study of the hybrid qubit dynamics. Hybrid qubit dues its name to the advantageous combination of manipulation speed of a charge…
Amorphous organic semiconductors based on small molecules and polymers are used in many applications, most prominently organic light emitting diodes (OLEDs) and organic solar cells. Impurities and charge traps are omnipresent in most…
Electron spins in semiconductor devices are highly promising building blocks for quantum processors (QPs). Commercial semiconductor foundries can create QPs using the same processes employed for conventional chips, once the QP design is…