Related papers: SRAM Alpha-SER Estimation From Word-Line Voltage M…

Increased process variability and reliability issues present a major challenge for future SRAM trends. Non-intrusive and accurate SRAM stability measurement is crucial for estimating yield in large SRAM arrays. Conventional SRAM variability…

Recently, the spatial modulation (SM) technique has been proposed for visible light communication (VLC). This paper investigates the average symbol error rate (SER) for the VLC using adaptive spatial modulation (ASM). In the system, the…

Non-invasive mobile electroencephalography (EEG) acquisition systems have been utilized for long-term monitoring of seizures, yet they suffer from limited battery life. Resistive random access memory (RRAM) is widely used in…

In this paper, we present a unified FPGA based electrical test-bench for characterizing different emerging NonVolatile Memory (NVM) chips. In particular, we present detailed electrical characterization and benchmarking of multiple…

Magneto-Electric FET (MEFET) is a recently developed post-CMOS FET, which offers intriguing characteristics for high speed and low-power design in both logic and memory applications. In this paper, for the first time, we propose a…

Resistive memories have limited lifetime caused by limited write endurance and highly non-uniform write access patterns. Two main techniques to mitigate endurance-related memory failures are 1) wear-leveling, to evenly distribute the writes…

Magnetic random access memory (MRAM) is a leading emergent memory technology that is poised to replace current non-volatile memory technologies such as eFlash. However, the scaling of MRAM technologies is heavily affected by…

Spatial and temporal variability of HfOx-based resistive random access memory (RRAM) are investigated for manufacturing and product designs. Manufacturing variability is characterized at different levels including lots, wafers, and chips.…

A programmable linear resistor with a compact footprint would have profound implications for microelectronics, enabling efficient in-sensor analog signal processing and in-memory computing. Non-volatile memory offers a potential solution…

Wireless sensing has been recognized as a key enabling technology for numerous emerging applications. For decades, the sensing performance was mostly evaluated from a reliability perspective, with the efficiency aspect widely unexplored.…

Emerging memristor-based array architectures have been effectively employed in non-volatile memories and neuromorphic computing systems due to their density, scalability and capability of storing information. Nonetheless, to demonstrate a…

Diagnosis results are highly dependent on the volume of test set. To derive the most efficient test set, we propose several machine learning based methods to predict the minimum amount of test data that produces relatively accurate…

We present a multiscale simulation framework to compute the current vs. voltage (I-V ) characteristics of metal/oxide/metal structures building the core of conductive bridging random access memory (CBRAM) cells and to shed light on their…

Flexible Electronics (FE) have emerged as a promising alternative to silicon-based technologies, offering on-demand low-cost fabrication, conformality, and sustainability. However, their large feature sizes severely limit integration…

Non-volatile memory (NVM) is a promising technology for low-energy and high-capacity main memory of computers. The characteristics of NVM devices, however, tend to be fundamentally different from those of DRAM (i.e., the memory device…

This paper summarizes the idea of Adaptive-Latency DRAM (AL-DRAM), which was published in HPCA 2015. The key goal of AL-DRAM is to exploit the extra margin that is built into the DRAM timing parameters to reduce DRAM latency. The key…

This paper summarizes the idea of Adaptive-Latency DRAM (AL-DRAM), which was published in HPCA 2015, and examines the work's significance and future potential. AL-DRAM is a mechanism that optimizes DRAM latency based on the DRAM module and…

Automatic Speech Recognition (ASR) plays a crucial role in human-machine interaction and serves as an interface for a wide range of applications. Traditionally, ASR performance has been evaluated using Word Error Rate (WER), a metric that…

Non-Volatile Memory (NVM) cells are used in neuromorphic hardware to store model parameters, which are programmed as resistance states. NVMs suffer from the read disturb issue, where the programmed resistance state drifts upon repeated…

In this study, we propose a novel machine learning based algorithm to improve the performance of beyond 5 generation (B5G) wireless communication system that is assisted by Orthogonal Frequency Division Multiplexing (OFDM) and…