Related papers: Resistive switching acceleration induced by therma…
Light-manipulation of correlated electronic phases in solids offers the tantalizing prospect of realizing electronic devices operating at the ultrafast time-scale. In this context, the experimental realization of non-equilibrium transitions…
Vertical structures of SiO$_{2}$ sandwiched between a top tungsten electrode and conducting non-metal substrate were fabricated by dry and wet etching methods. Both structures exhibit similar voltage-controlled memory behaviors, in which…
A femtosecond laser pulse is able to switch the magnetic state of a 3d-4f ferrimagnetic material on a pico-second time scale. Devices based on this all-optical switching (AOS) mechanism are competitive candidates for ultrafast memory…
The authors show that the magnetization of a magnetostrictive/piezoelectric multiferroic single-domain shape-anisotropic nanomagnet can be switched with very small voltages that generate strain in the magnetostrictive layer. This can be the…
We model electrical conductivity in metastable amorphous $Ge_{2}Sb_{2}Te_{5}$ using independent contributions from temperature and electric field to simulate phase change memory devices and Ovonic threshold switches. 3D, 2D-rotational, and…
The advent of advanced neuronal interfaces offers great promise for linking brain functions to electronics. A major bottleneck in achieving this is real-time processing of big data that imposes excessive requirements on bandwidth, energy…
With the ever-growing need to reduce energy consumption, building materials that passively heat or cool are gaining importance. However, many buildings require both heating and cooling, even within the same day. To date, few technologies…
Memristors, when utilized as electronic components in circuits, can offer opportunities for the implementation of novel reconfigurable electronics. While they have been used in large arrays, studies in ensembles of devices are comparatively…
Future applications of spin-orbit torque will require new mechanisms to improve the efficiency for switching nanoscale magnetic tunnel junctions (MTJs), while also controlling the magnetic dynamics to achieve fast, nanosecond scale…
NiO is a prototypical antiferromagnet with a characteristic resonance frequency in the THz range. From atomistic spin dynamics simulations that take into account the crystallographic structure of NiO, and in particular a magnetic anisotropy…
Memristive systems emerge as strong candidates for the implementation of Resistive Random Access Memories (RRAM) and neuromorphic computing devices, as they can mimic the electrical analog behavior or biological synapses. In addition,…
Thermal transistors that switch the thermal conductivity (\k{appa}) of the active layers are attracting increasing attention as thermal management devices. For electrochemical thermal transistors, several transition metal oxides (TMOs) have…
Real-time detection of moving objects involves memorisation of features in the template image and their comparison with those in the test image. At high sampling rates, such techniques face the problems of high algorithmic complexity and…
Memristive systems were proposed in 1976 by Leon Chua and Sung Mo Kang as a model for 2-terminal passive nonlinear dynamical systems which exhibit memory effects. Such systems were originally shown to be relevant to the modeling of action…
Both analog and digital resistive switching are essential components in the neuromorphic computing system. This work reports the influence of Cu ions for the transformation of analog to digital resistive switching in ITO/NiO/Ag memristor…
We study the resistive switching triggered by an applied electrical bias in antiferromagnetic Mott insulator Sr(3)Ir(2)O(7). The switching was previously associated with an electric-field driven structural transition. Here we use…
Under certain conditions, applying a sequence of voltage pulses of alternating polarities across a resistive switching memory device induces a finite number of fixed-point attractors in its time-averaged dynamics, known as dynamical…
Here we demonstrate that both, tunnel magneto resistance (TMR) and resistive switching (RS), can be observed simultaneously in nano-scale magnetic tunnel junctions. The devices show bipolar RS of 6 % and TMR ratios of about 100 %. For each…
We studied the resistive memory switching in pulsed laser deposited amorphous LaHoO3 (LHO) thin films for non-volatile resistive random access memory (RRAM) applications. Nonpolar resistive switching (RS) was achieved in PtLHOPt memory…
Nanometallic devices based on amorphous insulator-metal thin films are developed to provide a novel non-volatile resistance-switching random-access memory (RRAM). In these devices, data recording is controlled by a bipolar voltage, which…