Related papers: Stochastic modeling of Random Access Memories rese…
The development in electronic sector has brought a remarkable change in the life style of mankind. At the same time this technological advancement results adverse effect on environment due to the use of toxic and non degradable materials in…
In Valence Change Memory (VCM) cells, the conductance of an insulating switching layer is reversibly modulated by creating and redistributing point defects under an external field. Accurate simulations of the switching dynamics of these…
Despite the impressive search rate of one key per clock cycle, the update stage of a random-access-memory-based content-addressable-memory (RAM-based CAM) always suffers high latency. Two primary causes of such latency include: (1) the…
Our ISCA 2013 paper provides a fundamental empirical understanding of two major factors that make it very difficult to determine the minimum data retention time of a DRAM cell, based on the first comprehensive experimental characterization…
Dynamic Random Access Memory (DRAM) is the de-facto choice for main memory devices due to its cost-effectiveness. It offers a larger capacity and higher bandwidth compared to SRAM but is slower than the latter. With each passing generation,…
It is known that in some cases a Random Access Machine (RAM) benefits from having an additional input that is an arbitrary number, satisfying only the criterion of being sufficiently large. This is known as the ARAM model. We introduce a…
In this paper, a recursive least squares (RLS) based blind adaptive beamforming algorithm that features a new variable forgetting factor (VFF) mechanism is presented. The beamformer is designed according to the constrained constant modulus…
This paper examines the coexistence of resistive, capacitive, and inertia (virtual inductive) effects in memristive devices, focusing on ReRAM devices, specifically the interface-type or non-filamentary analog switching devices. A…
Resistive memories (RRAM) are promising candidates for replacing present nonvolatile memories and realizing storage class memories; hence resistance switching devices are of particular interest. These devices are typically memristive, with…
As conventional memory technologies are challenged by their technological physical limits, emerging technologies driven by novel materials are becoming an attractive option for future memory architectures. Among these technologies,…
This paper is motivated by modeling the cycle-to-cycle variability associated with the resistive switching operation behind memristors. As the data are by nature curves, functional principal component analysis is a suitable candidate to…
We propose a new data-driven method to select the optimal number of relevant components in Principal Component Analysis (PCA). This new method applies to correlation matrices whose time autocorrelation function decays more slowly than an…
Online system identification algorithms are widely used for monitoring, diagnostics and control by continuously adapting to time-varying dynamics. Typically, these algorithms consider a model structure that lacks parsimony and offers…
As data-intensive applications increasingly strain conventional computing systems, processing-in-memory (PIM) has emerged as a promising paradigm to alleviate the memory wall by minimizing data transfer between memory and processing units.…
Non-Volatile Random Access Memory (NVRAM) is a novel type of hardware that combines the benefits of traditional persistent memory (persistency of data over hardware failures) and DRAM (fast random access). In this work, we describe an…
In continual learning, a system learns from non-stationary data streams or batches without catastrophic forgetting. While this problem has been heavily studied in supervised image classification and reinforcement learning, continual…
Resistive Random Access Memory (ReRAM) is a promising candidate for implementing Computing-in-Memory (CIM) architectures and neuromorphic circuits. ReRAM cells exhibit significant variability across different memristive devices and cycles,…
Scalable persistent memory (PM) has opened up new opportunities for building indexes that operate and persist data directly on the memory bus, potentially enabling instant recovery, low latency and high throughput. When real PM hardware…
This paper considers the problem of nonstationary process monitoring under frequently varying operating conditions. Traditional approaches generally misidentify the normal dynamic deviations as faults and thus lead to high false alarms.…
The memristor is the fundamental non-linear circuit element, with uses in computing and computer memory. ReRAM (Resistive Random Access Memory) is a resistive switching memory proposed as a non-volatile memory. In this review we shall…