Related papers: Observation of the double quantum spin Hall phase …
We investigate an unconventional topological phase transition that occurs in quantum spin Hall (QSH) systems when applying an external in-plane magnetic field. We show that this transition between QSH and trivial insulator phases is…
The quantum spin Hall effect (QSHE), a hallmark of topological insulators, enables dissipationless, spin-polarized edge transport and has been predicted in various two-dimensional materials. However, challenges such as limited scalability,…
A novel topological insulator with tunable edge states, called quantum spin-quantum anomalous Hall (QSQAH) insulator, is predicted in a heterostructure of a hydrogenated Sb (SbH) monolayer on a LaFeO3 substrate by using ab initio methods.…
Quantum spin Hall effect is usually realized in two-dimensional materials with time-reversal symmetry, but whether it can be realized without symmetry protection remains unexplored. Here, we propose type-II quantum spin Hall insulator with…
We analyze a quantum spin Hall (QSH) device with a point contact connecting two of its edges. The contact supports a net spin tunneling current that can be probed experimentally via a two-terminal resistance measurement. We find that the…
The field of topological insulators (TI) was sparked by the prediction of the quantum spin Hall effect (QSHE) in time reversal invariant systems, such as spin-orbit coupled monolayer graphene. Ever since, a variety of monolayer crystals…
We analyze the detailed structure of topological edge mode protection occuring in hexagonal quantum spin Hall (QSH) materials. We focus on bismuthene, antimonene, and arsenene on a SiC substrate, which, due to their large bulk gap, may…
Dual quantum spin Hall insulator (QSHI) is a newly discovered topological state in the 2D material TaIrTe$_4$, exhibiting both a traditional $Z_2$ band gap at charge neutrality point and a van Hove singularity (VHS) induced correlated $Z_2$…
Quantum spin Hall (QSH) insulator materials feature topologically protected edge states that can drastically reduce dissipation and are useful for the next-generation electronics. However, the nonvolatile control of topological edge state…
The quantum spin Hall (QSH) state was recently demonstrated in monolayers of the transition metal dichalcogenide 1T'-WTe$_2$ and is characterized by a band gap in the two-dimensional (2D) interior and helical one-dimensional (1D) edge…
It is widely known that quantum spin Hall (QSH) insulator can be viewed as two copies of quantum anomalous Hall (QAH) insulator with opposite local magnetic moments. However, nearly every QSH insulator discovered so far is a nonmagnetic…
Topological insulators (TIs) exhibit novel physics with great promise for new devices, but considerable challenges remain to identify TIs with high structural stability and large nontrivial band gap suitable for practical applications. Here…
Two-dimensional (2D) topological insulators (TIs) hold promise for applications in spintronics based on the fact that the propagation direction of edge electrons of a 2D TI is robustly linked to their spin origination. Here, with the use of…
We consider a time reversal symmetry (TRS) broken Kane-Mele model superimposed with Haldane model and chart out the phase diagram using spin Chern number to investigate the fate of quantum anomalous Hall insulator (QAHI) and quantum spin…
Monolayer WTe2 stripes are quantum spin Hall (QSH) insulators. Density functional theory was used for investigating the electronic properties of the stripes and steps in bilayer Td-WTe2. For the stripes oriented along the dimer chains of W…
Topological edge states at the boundary of quantum spin Hall (QSH) insulators hold great promise for dissipationless electron transport. The device application of topological edge states has several critical requirements for the QSH…
We propose a general and tunable platform to realize high-density arrays of quantum spin-valley Hall kink (QSVHK) states with spin-valley-momentum locking based on a two-dimensional hexagonal topological insulator. Through the analysis of…
The realization of quantum spin Hall (QSH) effect in HgTe quantum wells (QWs) is considered a milestone in the discovery of topological insulators. The QSH edge states are predicted to allow current to flow at the edges of an insulating…
Quantum spin Hall insulators, recently realized in HgTe/(Hg,Cd)Te quantum wells, support topologically protected, linearly dispersing edge states with spin-momentum locking. A local magnetic exchange field can open a gap for the edge…
We show that the Quantum Spin Hall Effect, a state of matter with topological properties distinct from conventional insulators, can be realized in HgTe/CdTe semiconductor quantum wells. By varying the thickness of the quantum well, the…