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In this work, a new method for designing an analog circuit for deep sub-micron CMOS fabrication processes is proposed. The proposed method leverages the regression algorithms with the transistor circuit model to size a transistor in 0.18 um…
We demonstrate a simple and versatile resonator design based on a short strip of a typical coplanar waveguide shorted at one end to the ground and shunted at the other end with a large parallel-plate capacitor. Due to the shape of the…
Generating an exponential decay function with a time constant on the order of hundreds of milliseconds is a mainstay for neuromorphic circuits. Usually, either subthreshold circuits or RC-decays based on transconductance amplifiers are…
Trapped-ion quantum information processors offer many advantages for achieving high-fidelity operations on a large number of qubits, but current experiments require bulky external equipment for classical and quantum control of many ions. We…
This paper describes a 8 bits, 20 Msamples/s pipeline analog-to-digital converter implemented in 0.6 \mu m CMOS technology with a total power dissipation of 75.47 mW. Circuit techniques used include a precise comparator, operational…
We present the design, fabrication, and measurement of a monolithically integrated optical receiver analog front end, where low power operation is a primary consideration with a goal of supporting 56 Gbaud intensity modulated direct detect…
This work introduces a fully tunable, ultra-low power unipolar memory cell inspired by the Schmitt-trigger comparator and designed in CMOS using only nine transistors. The proposed circuit operates entirely in the current domain and…
We present the design and performance of a prototype ASIC digitizer for integrated wire chamber readout, implemented in 65 nm commercial CMOS technology. Each channel of the 4-channel prototype is composed of two 16-bit Time-to-Digital…
We present the design and simulation of a 30 $\mathrm{\mu m}$ thick 4H-SiC Low Gain Avalanche Diode (LGAD) optimized for high-voltage operation. A 2.4 $\mathrm{\mu m}$ thick epitaxially grown gain layer enables controlled internal…
This paper proposes and evaluates a novel architecture for a low-power Time-to-Digital Converter with high resolution, optimized for both integration in multichannel chips and high rate operation (40 Mconversion/s/channel). This converter…
Direct-current superconducting quantum interference devices (dc-SQUIDs) are one of the most sensitive magnetic detectors. These sensors are extensively used in the readout of superconducting transition edge sensors (TESs), which are used…
We present a 380-520 GHz balanced superconductor-insulator-superconductor (SIS) mixer on a single silicon substrate. All radio-frequency (RF) circuit components are fabricated on a $9 \mu$m thick membrane. The intermediate frequency (IF) is…
We report on the performance of an analog application-specific integrated circuit (ASIC) developed aiming for the front-end electronics of the X-ray CCDcamera system onboard the next X-ray astronomical satellite, ASTRO-H. It has four…
We report on the recent development of a versatile analog front-end compatible with a negative-ion $\mu$-TPC for a directional dark matter search as well as a dual-phase, next-generation $\mathcal{O}$(10~kt) liquid argon TPC to study…
Magnetic Feshbach resonances are a key tool in the field of ultracold quantum gases, but their full exploitation requires the generation of large, stable magnetic fields up to 1000 G with fractional stabilities of better than $10^{-4}$.…
Ring resonators are crucial in silicon photonics for various applications, but conventional designs face performance trade-offs. Here a third-order polynomial interconnected circular (TOPIC) bend is proposed to revolutionize the ring…
Nanopositioning techniques currently applied to characterize physical properties of materials interesting for applications at the microscopic scale rely on high-voltage electronic control circuits that should have the lowest possible noise…
Ion-Sensitive Field-Effect Transistors (ISFETs) form a wide-spread technology for sensing, thanks to their label-free detection and intrinsic CMOS compatibility. Their current sensitivity, {\Delta}ID/ID, for a given {\Delta}pH, however, is…
We report on the design and performance of a mixed-signal application specific integrated circuit (ASIC) dedicated to avalanche photodiodes (APDs) in order to detect hard X-ray emissions in a wide energy band onboard the International Space…
The ubiquitous use of sensing and signal processing is increasing exponentially with the advance of the Internet of Everything (IoE). In this context, the design of every time more power efficient sensor nodes is a must. Within these nodes,…