Related papers: Switching of Magnetization in Quantum Antiferromag…
We study the switching-process of the magnetization in a ferromagnetic-normal-metal multilayer system by a spin polarized electrical current via the spin transfer torque. We use a spin drift-diffusion equation (SDDE) and the…
Due to the lack of a net magnetic moment, antiferromagnets possess a unique robustness to external magnetic fields and are thus predicted to play an important role in future magnetic technologies. However, this robustness also makes them…
Perpendicular MgO-based Magnetic Tunnel Junctions are optimal candidates as building block of Spin Transfer Torque (STT) magnetoresistive memories. However, up to now, the only STT is not enough to achieve switching current density below…
We study magnetization reversal using various r.f. magnetic pulses. We show numerically that switching is possible with simple sinusoidal pulses; however the optimum approach is to use a frequency-swept (chirped) r.f. magnetic pulse, the…
The discovery of femtosecond laser-induced ultrafast demagnetization in 1996 opened a new field, femtomagnetism, in which magnetic order can be quenched on timescales shorter than a picosecond. This seminal observation revealed that angular…
Spin-orbit torques induced by spin Hall and interfacial effects in heavy metal/ferromagnetic bilayers allow for a switching geometry based on in-plane current injection. Using this geometry, we demonstrate deterministic magnetization…
Femtosecond (fs) coherent control of collective order parameters is important for non--equilibrium phase dynamics in correlated materials. Here we propose a possible scheme for fs control of a ferromagnetic order parameter based on…
The aim of the paper is to present a novel class of time-dependent controls to realize ultra-fast magnetization switching in nanomagnets driven by spin-torques produced by spin-polarized electric currents. Magnetization dynamics in such…
The theory behind the electrical switching of antiferromagnets is premised on the existence of a well defined broken symmetry state that can be rotated to encode information. A spin glass is in many ways the antithesis of this state,…
In spintronics, it is important to be able to manipulate magnetization rapidly and reliably. Several methods can control magnetization, such as by applying current pulses or magnetic fields. An applied current can reverse magnetization with…
Reversible control of magnetization by electric fields without assistance from a subsidiary magnetic field or electric current could help reduce the power consumption in spintronic devices. When increasing temperature above room…
Deterministic all-optical control of magnetization without an applied magnetic field has been reported for different materials such as ferrimagnetic and ferromagnetic thin films and granular recording media. These findings have challenged…
Applications of magnetic memory devices greatly benefit from ultra-fast, low-power switching. Here we propose how this can be achieved efficiently in a nano-sized synthetic antiferromagnet by using perpendicular-to-the-plane…
Using micromagnetics we demonstrate that the r.f. field produced by a spin valve can be used to reverse the magnetization in a magnetic nanoparticle. The r.f. field is generated using a current that specifically excites a uniform spin wave…
We apply an invariant-based inverse engineering method to control by time-dependent electric fields electron spin dynamics in a quantum dot with spin-orbit coupling in a weak magnetic field. The designed electric fields provide a shortcut…
Recent advances in high-density magnetic storage and spin electronics are based on the use of magnetic materials along with conventional microelectronic materials (metals, insulators and semiconductors). The unit information (bit) is stored…
In this article, we study control of electron-nuclear spin dynamics at magnetic field strengths where the Larmor frequency of the nucleus is comparable to the hyperfine coupling strength. The quantization axis for the nuclear spin differs…
All-optical spin switching is a potential trailblazer for information storage and communication at an unprecedented fast rate and free of magnetic fields. However, the current wisdom is largely based on semiempirical models of effective…
We demonstrate a quasi ballistic switching of the magnetization in a microscopic mag-neto resistive memory cell. By means of time resolved magneto transport we follow the large angle precession of the free layer magnetization of a spin…
Current induced magnetization switching by spin-orbit torques offers an energy-efficient means of writing information in heavy metal/ferromagnet (FM) multilayer systems. The relative contributions of field-like torques and damping-like…