Related papers: Time-Dependent Dielectric Breakdown on Subnanomete…
Improving the film quality in the synthesis of large-area hexagonal boron nitride films (h-BN) for two-dimensional material devices remains a great challenge. The measurement of electrical breakdown dielectric strength (EBD) is one of the…
We investigate band gaps, equilibrium structures, and phase stabilities of several bulk polymorphs of wide-gap oxide semiconductors ZnO, TiO2,ZrO2, and WO3. We are particularly concerned with assessing the performance of hybrid functionals…
A comprehensive study of the scaling of negative capacitance FinFET (NC-FinFET) is conducted with TCAD. We show that the NC-FinFET can be scaled to "2.1nm node" and almost "1.5nm node" that comes two nodes after the industry "3nm node,"…
The chemical ordering, electrical, optical, and magnetic properties of $Na_{0.5}Bi_{0.5}TiO_{3}$ (NBT) and 25$\%$ dysprosium doped NBT (DyNBT) were investigated in the framework of first-principles calculations using the full potential…
Nanosecond Surface Dielectric Barrier Discharge (ns-SDBDs) are a class of plasma actuators that utilize a high-voltage pulse of nanosecond duration between two surface-mounted electrodes to create an electrical breakdown of air, along with…
Time-dependent (TD) density functional theory (TDDFT) promises a numerically tractable account of many-body electron dynamics provided good simple approximations are developed for the exchange-correlation (XC) potential functional (XCPF).…
Time-to-digital converters (TDCs) are used in various fields, including high-energy physics. One advantage of implementing TDCs in field-programmable gate arrays (FPGAs) is the flexibility on the modification of the logics, which is useful…
We developed transmon qubits based on epitaxial tunnel junctions and interdigitated capacitors. This multileveled qubit, patterned by use of all-optical lithography, is a step towards scalable qubits with a high integration density. The…
Systolic array-based deep neural network (DNN) accelerators have recently gained prominence for their low computational cost. However, their high energy consumption poses a bottleneck to their deployment in energy-constrained devices. To…
Low power consumption in both static and dynamic modes of operation is a key requirement in modern, highly scaled nanoelectronics. Tunneling field-effect transistors (TFETs) that exploit direct band-to-band tunneling of charges and exhibit…
Nonlinear response of a Mott insulator to external electric field, corresponding to dielectric breakdown phenomenon, is studied within of a one-dimensional half-filled Hubbard model. It is shown that in the limit of nearly spin polarized…
The strength functions of isovector dipole resonances in the even oxygen isotopes $^{18\sim24}$O are calculated by using an extended version of the time-dependent Hartree-Fock theory known as the time-dependent density-matrix theory (TDDM).…
We present a comprehensive theoretical description for an irradiation of an ultrashort light pulse normally on thin materials based on first-principles time-dependent density functional theory. As the most elaborate scheme, we develop a…
The intrinsic performance of "type-II" InP/GaAsSb double heterojunction bipolar transistors (DHBTs) towards and beyond THz is predicted and analyzed based on a multi-scale technology computer aided design (TCAD) modeling platform calibrated…
We present a formulation of spin-conserving and spin-flip, hybrid time-dependent density functional theory (TDDFT), including the calculation of analytical forces, which allows for efficient calculations of excited state properties of…
In this paper we investigate the effect of Cd doping at ultra-low concentrations in SnO$_2$ both experimentally, by measuring the temperature dependence of the electric quadrupole hyperfine interactions with time-differential perturbed…
Consider the scattering of a time-harmonic electromagnetic plane wave by an open cavity which is embedded in a perfectly electrically conducting infinite ground plane. This paper concerns the numerical solutions of the open cavity…
Channel conductance measurements can be used as a tool to study thermally activated electron transport in the sub-threshold region of state-of-art FinFETs. Together with theoretical Tight-Binding (TB) calculations, this technique can be…
Nanostructured electrodes with voids or interconnected pores accommodate large volume changes, shorten ion diffusion pathways, and enhance the structural reversibility of alloying electrodes. While these nanoporous features improve the…
Bound electron pairs (BEPs) with energy in the band gap are interesting because they can participate in charge and spin transport in modern topologically nontrivial materials. We address the problem of their stability and study the…