Related papers: Mott resistive switching initiated by topological …
We present a coordinated study of the paramagnetic-to-antiferromagnetic, rhombohedral-to-monoclinic, and metal-to-insulator transitions in thin-film specimens of the classic Mott insulator V$_2$O$_3$ using low-energy muon spin relaxation,…
Quantum materials exhibiting phase transitions which can be controlled through external stimuli, such as electric fields, are promising for future computing technologies beyond conventional semiconductor transistors. Devices that take…
The resistivity maximum at a temperature $T=T_{\mathrm{max}}$ is a recurring feature of bandwidth-tuned Mott systems, yet its meaning remains controversial: is it a coherence-incoherence crossover of an electronically homogeneous metal, or…
Transition metal dichalcogenides (TMDs) exist in various crystal structures with semiconducting, semi-metallic, and metallic properties. The dynamic control of these phases is of immediate interest for next generation electronics such as…
The Mott transition is one of the fundamental issues in condensed matter physics, especially in the system with antiferromagnetic long-range order. However the Mott transition in quantum spin liquid (QSL) systems without long-range order is…
Coupling together distinct correlated and topologically non-trivial electronic phases of matter can potentially induce novel electronic orders and phase transitions among them. Transition metal dichalcogenide compounds serve as a bedrock…
Transition metal oxides (TMOs) are complex electronic systems which exhibit a multitude of collective phenomena. Two archetypal examples are VO2 and NdNiO3, which undergo a metal-insulator phase-transition (MIT), the origin of which is…
Solid-state programmable metallization cells have attracted considerable attention as memristive elements for Redox-based Resistive Random Access Memory (ReRAM) for low-power and low-voltage applications. In principle, liquid-state…
Interface-type resistive switching (RS) devices with lower operation current and more reliable switching repeatability exhibits great potential in the applications for data storage devices and ultra-low-energy computing. However, the…
The temperature dependence of the Mott metal-insulator transition (MIT) is studied with a VO_2-based two-terminal device. When a constant voltage is applied to the device, an abrupt current jump is observed with temperature. With increasing…
Recent proposals for the realization of time-reversal symmetry breaking and topological superconductivity in twisted nodal superconductors have led to a surge of theoretical and experimental studies of these systems, marking one of the…
Material realization of the non-Abelian Kitaev spin liquid phase - an example of Ising topological order (ITO) - has been the subject of intense research in recent years. The $4d$ honeycomb Mott insulator $\alpha$-RuCl$_3$ has emerged as a…
We report a first-order phase transition at T_M=357 K in single crystal Ca_2RuO_4, an isomorph to the superconductor Sr_2RuO_4. The discontinuous decrease in electrical resistivity signals the near destruction of the Mott insulating phase…
Ultrafast phase transitions induced by femtosecond light pulses present a new opportunity for manipulating the properties of materials. Understanding how these transient states are different from, or similar to, their thermal counterparts…
Transition metal phosphorous trichalcogenides, $M{\rm P}X_3$ ($M$ and $X$ being transition metal and chalcogen elements respectively), have been the focus of substantial interest recently because of their possible magnetism in the…
It has been reported that upon doping a Mott insulator, there can be a crossover to a pseudogaped metallic phase followed by a first-order transition to another thermodynamically stable metallic phase. We call this first-order metal-metal…
The correlation-driven Mott transition is commonly characterized by a drop in resistivity across the insulator-metal phase boundary; yet, the complex permittivity provides a deeper insight into the microscopic nature. We investigate the…
The metal-insulator transition (MIT) is one of the most dramatic manifestations of electron correlations in materials. Various mechanisms producing MITs have been extensively considered, including the Mott (electron localization via Coulomb…
Extensive investigations on topological phase transition (TPT) in three-dimensional compounds have been done. whereas, rare in two-dimensional systems, let alone noncentrosymmetric materials. In this work, based on first-principles…
The spin-orbit Mott insulator Sr3Ir2O7 provides a fascinating playground to explore insulator-metal transition driven by intertwined charge, spin, and lattice degrees of freedom. Here, we report high pressure electric resistance and…