Related papers: Geometrical design for pure current-driven domain …
Ultrathin ferromagnetic strips with high perpendicular anisotropy have been proposed for the development of memory devices where the information is coded in tiny domains separated by domain walls. The design of practical devices requires…
Domain walls are the transition regions between two magnetic domains. These objects have been very relevant during the last decade, not only due to their intrinsic interest in the development of novel spintronics devices but also because of…
Current-driven vortex wall dynamics is studied by means of a two-dimensional analytical model and micromagnetic simulation. By constructing a trial function for the vortex wall in the magnetic wire, we analytically solve for domain wall…
This paper introduces an oscillator scheme based on the oscillations of magnetic domain walls due to spin-polarized currents, where the current is injected perpendicular to the sample plane in a localized part of a nanowire. Depending on…
The future developments of three-dimensional magnetic nanotechnology require the control of domain wall dynamics by means of current pulses. While this has been extensively studied in planar magnetic strips (planar nanowires), few reports…
Domain wall propagation in cylindrical nanowires with modulations of diameter is a key phenomenon to design physics-oriented devices, or a disruptive three-dimensional magnetic memory. This chapter presents a combination of analytical…
We perform real-space imaging of propagating magnetic domains in the fractional quantum Hall system using spin-sensitive photoluminescence microscopy. The propagation is continuous and proceeds in the direction of the conventional current,…
We carry out large-scale micromagnetic simulations which demonstrate that due to topological constraints, internal domain walls (Bloch lines) within extended domain walls are more robust than domain walls in nanowires. Thus, the possibility…
We generalize domain-wall dynamics to the case of translationally noninvariant ferromagnetic nanowires. The obtained equations of motion make the description of the domain-wall propagation more realistic by accounting for the variations…
So far magnetic domain walls in one-dimensional structures have been described theoretically only in the cases of flat strips, or cylindrical structures with a compact cross-section, either square or disk. Here we describe an extended phase…
Direct observations of current-induced domain-wall propagation by spin-polarized scanning electron microscopy are reported. Current pulses move head-to-head as well as tail-to-tail walls in sub-micrometer Fe_{20}Ni_{80} wires in the…
A next-generation memory device utilizing a three-dimensional nanowire system requires the reliable control of domain wall motion. In this letter, domain walls are studied in cylindrical nanowires consisting of alternating segments of…
Current driven domain wall motion in curved Heavy Metal/Ferrimagnetic/Oxide multilayer strips is investigated using systematic micromagnetic simulations which account for spin-orbit coupling phenomena. Domain wall velocity and…
Magnetic domain walls can be moved by spin-polarized currents due to spin-transfer torques. This opens the possibility to use them in spintronic memory devices as, e.g., in racetrack storage. Naturally, in miniaturized devices domain walls…
The current-induced motion of a domain wall in a semicircle nanowire with applied Zeeman field is investigated. Starting from a micromagnetic model we derive an analytical solution which characterizes the domain-wall motion as a harmonic…
The recent experimental demonstration of spin-polarized supercurrents offer a venue for establishment of a superconducting analogue to conventional spintronics. Whereas domain wall motion in purely magnetic structures is a well-studied…
This review describes in detail the essential techniques used in microscopic theories on spintronics. We have investigated the domain wall dynamics induced by electric current based on the $s$-$d$ exchange model. The domain wall is treated…
We propose a physical mechanism for fine-tuning the phase of a domain wall around the equilibrium directions involving the application of an external field and a spin polarized current in opposite directions. In this way, the position of…
Of the new types of cryoelectronic devices under development, including phase shifters, giant magnetoresistance switches, diodes, transistors, and memory cells, some are based on hybrid superconductor-normal metal or…
The current-driven domain wall motion along two exchange-coupled ferromagnetic layers with perpendicular anisotropy is studied by means of micromagnetic simulations and compared to the conventional case of a single ferromagnetic layer. Our…