Related papers: Coupled vertical double quantum dots at single-hol…
Most quantum computing architectures to date natively support multi-valued logic, albeit being typically operated in a binary fashion. Multi-valued, or qudit, quantum processors have access to much richer forms of quantum entanglement,…
Quantum gates are the building blocks of quantum circuits, which in turn are the cornerstones of quantum information processing. In this work, we theoretically investigate a single-step implementation of both a universal two- (CNOT) and…
A scalable quantum information processing architecture based on silicon metal-oxide-semiconductor technology is presented, combining quantum hardware elements from planar and 3D silicon-on-insulator technologies. This architecture is…
We investigate the characteristics of purely electrostatic interactions with external gates in constructing full single qubit manipulations. The quantum bit is naturally encoded in the spatial wave function of the electron system.…
We study two quantum dots in the limit of strong dot-lead coupling and weak dot-dot tunneling. The model maps on Ising-coupled Kondo impurities. We argue that a new quantum critical fixed point exists at an intermediate value of the mutual…
Controlling long-range quantum correlations is central to quantum computation and simulation. In quantum dot arrays, experiments so far rely on nearest-neighbour couplings only, and inducing long-range correlations requires sequential local…
Electrons confined in silicon quantum dots exhibit orbital, spin, and valley degrees of freedom. The valley degree of freedom originates from the bulk bandstructure of silicon, which has six degenerate electronic minima. The degeneracy can…
Recently there has been a great deal of interest on the possibility to exploit quantum-mechanical effects to increase the performance of energy storage systems. Here we introduce and solve a model of a quantum supercapacitor. This consists…
Silicon-germanium heterostructures have successfully hosted quantum dot qubits, but the intrinsic near-degeneracy of the two lowest valley states poses an obstacle to high fidelity quantum computing. We present a modification to the Si/SiGe…
Single crystalline InSb nanosheet is an emerging planar semiconductor material with potential applications in electronics, infrared optoelectronics, spintronics and topological quantum computing. Here we report on realization of a quantum…
We propose a quantum computation architecture of double-dot molecules, where the qubit is encoded in the molecule two-electron spin states. By arranging the two dots inside each molecule perpendicular to the qubit scaling line, the…
We report the realization of an array of four tunnel coupled quantum dots in the single electron regime, which is the first required step toward a scalable solid state spin qubit architecture. We achieve an efficient tunability of the…
It has been shown that the presence of a metal plate near a double quantum well with spatially separated electron and hole layers may lead to a drastic reconstruction of the system state with the formation of stable charged complexes of…
We propose a new scheme for solid-state photonic quantum computation in which trapped photons in optical cavities are taken as a quantum bit. Quantum gates can be realized by coupling the cavities with quantum dots through waveguides. The…
We present a set of concrete and realistic ideas for the implementation of a small-scale quantum computer using electron spins in lateral GaAs/AlGaAs quantum dots. Initialization is based on leads in the quantum Hall regime with tunable…
In this letter we report single-hole tunneling through a quantum dot in a two-dimensional hole gas, situated in a narrow-channel field-effect transistor in intrinsic silicon. Two layers of aluminum gate electrodes are defined on Si/SiO$_2$…
Single electron spins in semiconductor quantum dots (QDs) are a versatile platform for quantum information processing, however controlling decoherence remains a considerable challenge. Recently, hole spins have emerged as a promising…
Electron spin qubits in Si/SiGe quantum wells are limited by the small and variable energy separation of the conduction band valleys. While sharp quantum well interfaces are pursued to increase the valley splitting energy deterministically,…
Quantum dots are fabricated in a Ga[Al]As-heterostructure by local oxidation with an atomic force microscope. This technique, in combination with top gate voltages, allows us to generate steep walls at the confining edges and small lateral…
We have measured a graphene double quantum dot device with multiple electrostatic gates that are used to enhance control to investigate it. At low temperatures the transport measurements reveal honeycomb charge stability diagrams which can…