Related papers: Field-free ultrafast magnetization reversal of a n…
The demand for faster magnetization switching speeds and lower energy consumption has driven the field of spintronics in recent years. The magnetic tunnel junction is the most developed spintronic memory device in which the magnetization of…
We demonstrate a quasi ballistic switching of the magnetization in a microscopic mag-neto resistive memory cell. By means of time resolved magneto transport we follow the large angle precession of the free layer magnetization of a spin…
Nanopatterned FePt nano-dots often exhibit low coercivity and a broad switching field distribution, which could arise due to edge damage during the patterning process causing a reduction in the $L1_{0}$ ordering required for a high…
Magnetization reversal in magnetic nanostructures is investigated numerically over time-scales ranging from fast switching processes on a picosecond scale to thermally activated reversal on a microsecond time-scale. A simulation of the…
Spin polarized currents are employed to efficiently manipulate the magnetization of ferromagnetic ultrathin films by exerting a torque on it. If the spin currents are generated by means of the spin-orbit interaction between a ferromagnetic…
The concept of perpendicular shape anisotropy spin-transfer torque magnetic random-access memory (PSA-STT-MRAM) consists in increasing the storage layer thickness to values comparable to the cell diameter, to induce a perpendicular shape…
Magnetization reversal by a femtosecond circularly polarized laser pulse has been recently demonstrated in rare-earth doped transition metals (RE-TM). The switching mechanism has been attributed to an inverse Faraday effect and thermal…
Planar current-induced magnetization switching (CIMS) driven by spin-orbit torque (SOT) requires an in-plane uniaxial magnetic anisotropy (UMA), which can be induced by oblique-angle sputter deposition of the heavy-metal underlayer in…
The magnetization behaviour of the soft Cobalt Ferrite-hard Strontium Ferrite nanocomposite is tuned from the non exchange spring nature to the exchange spring nature, by controlling the particle size of the soft Cobalt Ferrite in the…
Many key electronic technologies (e.g., large-scale computing, machine learning, and superconducting electronics) require new memories that are fast, reliable, energy-efficient, and of low-impedance at the same time, which has remained a…
Modern magnetic memory technology requires unconventional transverse spin current to achieve deterministic switching of perpendicular magnetization. Spin current in antiferromagnets (AFMs) has been long thought to be trivial as nonmagnets.…
Control of magnetic order in antiferromagnets is a central challenge in the development of next-generation spintronic devices. Here, we propose and analyze magnetization switching driven by the field-derivative torque, a torque that…
A mechanism of current-induced magnetization reversal based on the parametric resonance is described. The source of the magnetization reversal is a current-induced magnetic field, which is applied perpendicularly to the easy axis of…
We theoretically study the spin-polarized transport through a single-molecule magnet, which is weakly coupled to ferromagnetic leads, by means of the rate-equation approach. We consider both the ferromagnetic and antiferromagnetic…
We report observation of a "non-volatile" converse magneto-electric effect in elliptical FeGa nanomagnets delineated on a piezoelectric PMN-PT substrate. The nanomagnets are initially magnetized with a magnetic field directed along their…
Exploring novel strategies to manipulate the order parameter of magnetic materials by electrical means is of great importance, not only for advancing our understanding of fundamental magnetism, but also for unlocking potential practical…
We describe a spin logic device with controllable magnetization switching of perpendicularly magnetized ferromagnet / heavy metal structures on a ferroelectric (1-x)[Pb(Mg1/3Nb2/3)O3]-x[PbTiO3] (PMN-PT) substrate using current-induced…
We proposed and demonstrated a simple method for detection of in-plane magnetization switching by spin-orbit torque (SOT) in bilayers of non-magnetic / magnetic materials. In our method, SOT is used not only for magnetization switching but…
The half antivortex, a fundamental topological structure which determines magnetization reversal of submicron magnetic devices with domain walls, has been suggested also to play a crucial role in spin torque induced vortex core reversal in…
We have measured the statistical properties of magnetic reversal in nanomagnets driven by a spin-polarized current. Like reversal induced by a magnetic field, spin-transfer-driven reversal near room temperature exhibits the properties of…