Related papers: Spin-Dependent Capture Mechanism for Magnetic Fiel…

Optically addressable spins in materials are important platforms for quantum technologies, such as repeaters and sensors. Identification of such systems in two-dimensional (2d) layered materials offers advantages over their bulk…

Nuclear magnetic resonance (NMR) is particularly relevant for studies of internuclear spin coupling at zero and ultra-low fields (ZULF), where spin-spin interactions dominate over Zeeman ones. Here we report on ZULF NMR in CdTe. In this…

In this study we investigate magnetic properties, surface morphology and crystal structure in iron nanoclusters electrodeposited on lightly-doped (100) n-type silicon substrates. Our goal is to investigate the spin injection and detection…

We suggest that electron spin resonance (ESR) experiment can be used as a probe of spinon excitations of hypothetical spin-liquid state of frustrated antiferromagnet in the presence of asymmetric Dzyaloshinskii-Moriya (DM) interaction. We…

We report an implementation of the nuclear magnetic resonance (NMR) shielding ($\sigma$), isotope-independent indirect spin-spin coupling ($K$) and the magnetizability ($\xi$) tensors in the frozen density embedding (FDE) scheme using the…

Spin-memory loss (SML) of electrons traversing ferromagnetic-metal/heavy-metal (FM/HM), FM/normal-metal (FM/NM) and HM/NM interfaces is a fundamental phenomenon that must be invoked to explain consistently large number of spintronic…

We demonstrate a scalable new ferromagnetic resonance (FMR) technique based on the spin-orbit interaction. An alternating current drives FMR in uniform ferromagnetic structures patterned from the dilute magnetic semiconductors (Ga,Mn)As and…

Spin-dependent processes play a crucial role in organic electronic devices. Spin coherence can give rise to spin mixing due to a number of processes such as hyperfine coupling, and leads to a range of magnetic field effects. However, it is…

Spin-dependent transport was investigated in a spin metal-oxide-semiconductor field-effect transistors (spin MOSFET) with ferromagnetic MnAs source and drain (S/D) contacts. The spin MOSFET of bottom-gate type was fabricated by…

Memory effects can have a profound impact on the resistivity of semiconductor systems, resulting in giant negative magnetoresistance and MIRO phenomena. This work opens the discussion of the memory effects in 3D conducting systems featured…

Spin dependent recombination in GaAsN offers many interesting possibilities in the design of spintronic devices mostly due to its astounding capability to reach conduction band electron spin polarizations close to 100% at room temperature.…

A numerical simulation of spin-dependent quantum transport for a spin field effect transistor (spinFET) is implemented in a widely used simulator nanoMOS. This method includes the effect of both spin relaxation in the channel and the…

Coherent control of individual molecular spins in nano-devices is a pivotal prerequisite for fulfilling the potential promised by molecular spintronics. By applying electric field pulses during time-resolved electron spin resonance…

This article reviews static and dynamic interfacial effects in magnetism, focusing on interfacially-driven magnetic effects and phenomena associated with spin-orbit coupling and intrinsic symmetry breaking at interfaces. It provides a…

The nuclear magnetic resonance (NMR) spectrum of spin-3/2 nuclei in a static magnetic field aligned with one of the electric field gradient (EFG) principal axes is developed analytically, based on fictitious spin-1/2 formalism. Compact…

We propose and numerically simulate novel reconfigurable logic gates employing spin metal-oxide-semiconductor field-effect transistors (spin MOSFETs). The output characteristics of the spin MOSFETs depend on the relative magnetization…

We investigate a silicon single-electron transistor (SET) in a metal-oxide-semiconductor (MOS) structure by applying a magnetic field perpendicular to the sample surface. The quantum dot is defined electrostatically in a point contact…

The viability of past, current and future devices for information technology hinges on their sensitivity to the presence of impurities. The latter can lead to resistivity anomalies, the so-called Kondo effect, reshape extrinsically Hall…

Carrier generation by impact ionization and subsequent recombination under the influence of magnetic field has been studied for InSb slab. A simple analytic expression for threshold electric field as a function of magnetic field is…

We report measurements of spin-dependent scattering of conduction electrons by neutral donors in an accumulation-mode field-effect transistor formed in isotopically enriched silicon. Spin-dependent scattering was detected using electrically…