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Related papers: Strain-driven Charge Localisation and Spin Dynamic…

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Solid-state spin defects are attractive candidates for developing quantum sensors and simulators. The spin and charge degrees of freedom in large defect ensembles are a promising platform to explore complex many-body dynamics and the…

Conduction band-edge spin-orbit splitting (SOS) in monolayer transition metal dichalcogenides determines a competition between bright and dark excitons and sets conditions for spintronics applications of these semiconductors. Here, we…

Mesoscale and Nanoscale Physics · Physics 2026-02-11 Igor Rozhansky , Michele Masseroni , Ricardo Pisoni , Suad Alshammari , Xue Li , Thomas Ihn , Klaus Ensslin , James McHugh , Vladimir Fal'ko

Transition metal dichalcogenides (TMDs) are interesting for understanding fundamental physics of two-dimensional materials (2D) as well as for many emerging technologies, including spin electronics. Here, we report the discovery of…

The control of localized magnetic domains at the nanoscale holds great promise for next-generation spintronic applications. Colloidal transition metal dichalcogenides nanostructures are experimentally accessible and chemically tunable…

Materials Science · Physics 2025-12-18 Surender Kumar , Stefan Velja , Muhammad Sufyan Ramzan , Caterina Cocchi

Two-dimensional (2D) semiconducting transition metal dichalcogenides such as MoS$_2$ have attracted extensive research interests for potential applications in optoelectronics, spintronics, photovoltaics, and catalysis. To harness the…

Materials Science · Physics 2020-07-01 Anne Marie Z. Tan , Christoph Freysoldt , Richard G. Hennig

Investigation of the electronic and spin structure in double perovskites is recently attracting significant attention, mainly driven by their unique multifunctional properties and other underlying charge and spin dynamics. Herein, using…

Materials Science · Physics 2023-07-18 R. Hissariya , R. Sharma , S. K. Mishra

We have experimentally and theoretically investigated the electron spin transport and spin distribution at room temperature in a Si two-dimensional (2D) inversion channel of back-gate-type spin metal-oxide-semiconductor field-effect…

Applied Physics · Physics 2020-07-22 Shoichi Sato , Masaaki Tanaka , Ryosho Nakane

$^{1}$H-NMR spin-echo measurements of the spin-echo decay $M(2\tau)$ with a decay rate 1/$T_{2}$ and the frequency shift $\Delta\nu/\nu_{0}$ under applied magnetic field $\mathbf{B}$$_{0}$ = 9 T along the a-axis over a temperature range…

Strongly Correlated Electrons · Physics 2009-11-11 Guoqing Wu , P. Ranin , G. Gaidos , W. G. Clark , S. E. Brown , L. Balicas , L. K. Montgomery

The spins of the low-spin Ir4+ (S = 1/2, d5) ions at the octahedral sites of the oxides Sr3NiIrO6, Sr2IrO4 and Na2IrO3 exhibit preferred orientations with respect to their IrO6 octahedra. We evaluated the magnetic anisotropies of these S =…

Strongly Correlated Electrons · Physics 2016-04-20 Elijah E. Gordon , Hongjun Xiang , Jürgen Köhler , Myung-Hwan Whangbo

A previously proposed non-canonical coupled-perturbed Kohn-Sham density functional theory (KS-DFT)/Hartree-Fock (HF) treatment for spin-orbit coupling is here generalized to infinite periodic systems. The scalar-relativistic periodic…

It is universally accepted that noise and decoherence affecting the performance of superconducting quantum circuits are consistent with the presence of spurious two-level systems (TLS). In recent years bulk defects have been generally ruled…

Molybdenum disulfide has recently emerged as a promising two-dimensional semiconducting material for nano-electronic, opto-electronic and spintronic applications. However, demonstrating spin-transport through a semiconducting MoS2 channel…

Neutron diffraction, magnetization and muon spin relaxation measurements, supplemented by density functional theory (DFT) calculations are employed to unravel temperature-driven magnetization reversal (MR) in inverse spinel Co$_2$VO$_4$.…

The compound Ba3HoRu2O9 magnetically orders at 50 K (TN1) followed by another complex magnetic ordering at 10.2 K (TN2). The 2nd magnetic phase transition was characterized by the co-existence of two competing magnetic ground states…

Strongly Correlated Electrons · Physics 2024-06-18 E. Kushwaha , G. Roy , M. Kumar , A. M. dos Santos , S. Ghosh , D. T. Adroja , V. Caignaert , O. Perez , A. Pautrat , T. Basu

Control of impurity concentrations in semiconducting materials is essential to device technology. Because of their intrinsic confinement, the properties of two-dimensional semiconductors such as transition metal dichalcogenides (TMDs) are…

This paper reports on the spin glass-like coexistence of competing magnetic orders in oxygen-deficient V2O5 nanoparticles having a broad size distribution. X-ray photoelectron spectroscopy yields the surface chemical stoichiometry of nearly…

The ability to perform efficient electrical spin injection from ferromagnetic metals into two-dimensional semiconductor crystals based on transition metal dichalcogenide monolayers is a prerequisite for spintronic and valleytronic devices…

Materials Science · Physics 2018-03-29 Thomas Garandel , Rémi Arras , Xavier Marie , Pierre Renucci , Lionel Calmels

The spin excitations from the nonmagnetic charge-ordered insulating state of $\alpha$-(BEDT-TTF)$_2$I$_3$ at ambient pressure have been investigated by probing the static and low-frequency dynamic spin susceptibilities via site-selective…

Strongly Correlated Electrons · Physics 2016-09-08 Kyohei Ishikawa , Michihiro Hirata , Dong Liu , Kazuya Miyagawa , Masafumi Tamura , Kazushi Kanoda

Strain-engineered transition-metal dichalcogenide nanobubbles are promising platforms for quantum emission, as revealed by recent experimental observations. In this work, we present an \textit{ab initio} investigation of MoS$_2$, WS$_2$,…

Mesoscale and Nanoscale Physics · Physics 2026-02-25 Stefan Velja , Alexander Steinhoff , Jannis Krumland , Christopher Gies , Caterina Cocchi

A study of donor electron spins and spin--dependent electronic transitions involving phosphorous ($^{31}$P) atoms in proximity of the (111) oriented crystalline silicon (c-Si) to silicon dioxide (SiO$_{2}$) interface is presented for…

Materials Science · Physics 2015-05-13 S. -Y. Paik , S. -Y. Lee , W. J. Baker , D. R. McCamey. C. Boehme
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