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SRAM-based compute-in-memory (CIM) offers high computational density and energy efficiency for deep neural network (DNN) accelerators, but its limited capacity causes on/off-chip data movement overhead for large DNN models. Existing CIM…
DRAM-based main memory is used in nearly all computing systems as a major component. One way of overcoming the main memory bottleneck is to move computation near memory, a paradigm known as processing-in-memory (PiM). Recent PiM techniques…
Resistive memories have limited lifetime caused by limited write endurance and highly non-uniform write access patterns. Two main techniques to mitigate endurance-related memory failures are 1) wear-leveling, to evenly distribute the writes…
Processing-in-memory (PIM) architectures are emerging to reduce data movement in data-intensive applications. These architectures seek to exploit the same physical devices for both information storage and logic, thereby dwarfing the…
In recent years, memory wall has been a great performance bottleneck of computer system. To overcome it, Non-Volatile Main Memory (NVMM) technology has been discussed widely to provide a much larger main memory capacity. Last year, Intel…
Compute-In-Memory (CIM) systems, particularly those utilizing ReRAM and memristive technologies, offer a promising path toward energy-efficient neural network computation. However, conventional quantization and compression techniques often…
Compute-in-memory (CIM) is an efficient method for implementing deep neural networks (DNNs) but suffers from substantial overhead from analog-to-digital converters (ADCs), especially as ADC precision increases. Low-precision ADCs can reduce…
Processing-In-Memory (PIM) architectures offer a promising approach to accelerate Graph Neural Network (GNN) training and inference. However, various PIM devices such as ReRAM, FeFET, PCM, MRAM, and SRAM exist, with each device offering…
RRAM-based in-Memory Computing is an exciting road for implementing highly energy efficient neural networks. This vision is however challenged by RRAM variability, as the efficient implementation of in-memory computing does not allow error…
Processing-in-memory (PIM) is a promising computing paradigm to tackle the "memory wall" challenge. However, PIM system-level benefits over traditional von Neumann architecture can be reduced when the memory array cannot fully store all the…
This paper presents a PVT-resilient, subthreshold SRAM-based computing-in-memory (CIM) macro tailored for energy-efficient spiking neural networks (SNNs). The macro integrates in-situ current sensors and distributed voltage regulators to…
Spiking Neural Networks (SNNs) have shown capabilities of achieving high accuracy under unsupervised settings and low operational power/energy due to their bio-plausible computations. Previous studies identified that DRAM-based off-chip…
Magnetoresistive random access memory (MRAM) technologies with thermally unstable nanomagnets are leveraged to develop an intrinsic stochastic neuron as a building block for restricted Boltzmann machines (RBMs) to form deep belief networks…
In-memory computing (IMC) utilizing synaptic crossbar arrays is promising for energy-efficient deep neural network (DNN) accelerators. Various technologies (CMOS and post-CMOS) have been explored as synaptic device candidates, each with its…
Resistive random-access memory (RRAM) is gaining popularity due to its ability to offer computing within the memory and its non-volatile nature. The unique properties of RRAM, such as binary switching, multi-state switching, and device…
Non-Volatile Memory (NVM) cells are used in neuromorphic hardware to store model parameters, which are programmed as resistance states. NVMs suffer from the read disturb issue, where the programmed resistance state drifts upon repeated…
This paper investigates the relationship between mapping style and device roadmap in Resistive Random Access Memory (ReRAM) architectures for neuromorphic computing. The study leverages simulations using DNN+NeuroSim to evaluate the impact…
Dynamic Random Access Memory (DRAM) is the prevalent memory technology used to build main memory systems of almost all computers. A fundamental shortcoming of DRAM is the need to refresh memory cells to keep stored data intact. DRAM refresh…
Non-volatile memory (NVM) technologies, being accessible in the same manner as DRAM, are considered indispensable for expanding main memory capacities. Intel Optane DCPMM is a long-awaited product that drastically increases main memory…
Resistive-random-access-memory (ReRAM) based processing-in-memory (R$^2$PIM) accelerators show promise in bridging the gap between Internet of Thing devices' constrained resources and Convolutional/Deep Neural Networks' (CNNs/DNNs')…