Related papers: Quantum Hall effect in InAsSb quantum wells at ele…

Magnetotransport measurements are presented on paramagnetic (Hg,Mn)Te quantum wells (QWs) with an inverted band structure. Gate-voltage controlled density dependent measurements reveal an unusual behavior in the transition regime from n- to…

Quantized anomalous Hall effects (QAHEs) occur in remarkable electronic states which possess not only quantized Hall signals but in some cases regions of dissipationless electron transport. The initial demonstrations of a QAHE in a…

We report an experimental study of quantum conductivity corrections for two-dimensional electron gas in a GaAs/InGaAs/GaAs single and double quantum wells in a wide temperature range (1.8-100) K. We perform a comparison of our experimental…

Mid-infrared optical Hall effect measurements are used to determine the free charge carrier parameters of an unintentionally doped wurtzite-structure $c$-plane oriented In$_{0.33}$Ga$_{0.67}$N epitaxial layer. Room temperature electron…

We have investigated spin and carrier dynamics of resident holes in high-mobility two-dimensional hole systems in GaAs/Al$_{0.3}$Ga$_{0.7}$As single quantum wells at temperatures down to 400 mK. Time-resolved Faraday and Kerr rotation, as…

We report on the detection of the intrinsic spin Hall effect in a modulation doped Al-GaAs/GaAs/AlGaAs heterostructure bounded by a self-aligned pn-junction, fabricated by the cleaved edge overgrowth method. Light emission due to the…

The effective electron mass parameter in Si-doped Al$_{0.72}$Ga$_{0.28}$N is determined to be $m^\ast=(0.336\pm0.020)\,m_0$ from mid-infrared optical Hall effect measurements. No significant anisotropy of the effective electron mass…

The discovery of the quantum Hall (QH) effect led to the realization of a topological electronic state with dissipationless currents circulating in one direction along the edge of a two dimensional electron layer under a strong magnetic…

We study localized in-gap states and quantum spin Hall effect in Si-doped InAs/GaSb quantum wells. We propose a model describing donor and/or acceptor impurities to describe Si dopants. This model shows in-gap bound states and wide…

We develop a temperature dependent empirical pseudopotential theory to study the electronic and optical properties of self-assembled quantum dots (QDs) at finite temperature. The theory takes the effects of both lattice expansion and…

We show that synthesis-induced Metal -Insulator transition (MIT) for electronic transport along the orthorombic c axis of FeSb$_{2}$ single crystals has greatly enhanced electrical conductivity while keeping the thermopower at a relatively…

Mainstream among topological insulators, GaSb/InAs quantum wells present a broken gap alignment for the energy bands which supports the quantum spin Hall insulator phase and forms an important building block in the search of exotic states…

We present a consistent treatment of the quantum Hall effect within the electrostatic approximation. We derive the form of the density of states (DOS) which differs from the usual gaussian shape valid for non-interacting electrons. Below a…

Direct electron spin resonance (ESR) on a high mobility two dimensional electron gas in a single AlAs quantum well reveals an electronic $g$-factor of 1.991 at 9.35 GHz and 1.989 at 34 GHz with a minimum linewidth of 7 Gauss. The ESR…

We report the observation of metallic-like behavior at low temperatures and zero magnetic field in two dimensional (2D) electrons in an AlAs quantum well. At high densities the resistance of the sample decreases with decreasing temperature,…

Quantum anomalous Hall effect (QAHE), which generates dissipation-less edge current without external magnetic field, is observed in magnetic-ion doped topological insulators (TIs), such as Cr- and V-doped (Bi,Sb)2Te3. The QAHE emerges when…

We report tilted-field magnetotransport measurements of two-dimensional electron systems in a 200 Angstrom-wide Al(0.13)Ga(0.87)As quantum well. We extract the energy gap for the quantum Hall state at Landau level filling \nu =1 as a…

The longitudinal thermopower of ultra-high mobility two-dimensional electrons has been measured at both zero magnetic field and at high fields in the compressible metallic state at filling factor $\nu = 3/2$ and the incompressible…

The results of experimental studies of the Shubnikov-de Haas (SdH) efect in the (013)-HgTe/Hg$_{1-x}$Cd$_x$Te quantum wells (QWs) of electron type of conductivity both with normal and inverted energy spectrum are reported. Comprehensive…

The quantum Hall effect is investigated in a high-mobility two-dimensional electron gas on the surface of a cylinder. The novel topology leads to a spatially varying filling factor along the current path. The resulting inhomogeneous…