Related papers: Reducing strain fluctuations in quantum dot device…
We have observed reproducible conductance fluctuations at low temperature in a small GaAs:Si wire driven across the Anderson transition by the application of a gate voltage. We analyse quantitatively the log-normal conductance statistics in…
We present overlapping top gate electrodes for the formation of gate defined lateral junctions in semiconducting layers as an alternative to the back gate/top gate combination and to the split gate configuration. The optical lithography…
Anharmonicity of the inter-atomic potential is taken into account for the quantitative simulation of the conduction and valence band offsets for highly-strained semiconductor heterostructures. The anharmonicity leads to a weaker compressive…
We use electrostatic force microscopy to spatially resolve random telegraph noise at the Si/SiO$_2$ interface. Our measurements demonstrate that two-state fluctuations are localized at interfacial traps, with bias-dependent rates and…
With the long coherence time, the fixed-frequency transmon qubit is a promising qubit modality for quantum computing. Currently, diverse qubit architectures that utilize fixed-frequency transmon qubits have been demonstrated with…
Disorder in the heterogeneous material stack of semiconductor spin qubit systems introduces noise that compromises quantum information processing, posing a challenge to coherently control large-scale quantum devices. Here, we exploit…
We develop a robust and versatile platform to define nanostructures at oxide interfaces via patterned top gates. Using LaAlO$_3$/SrTiO$_3$ as a model system, we demonstrate controllable electrostatic confinement of electrons to nanoscale…
We investigate the reduction of the electromagnetic field fluctuations in resonance fluorescence from a single emitter coupled to an optical nanostructure. We find that such hybrid system can lead to the creation of squeezed states of…
Solid-state qubits integrated on semiconductor substrates currently require at least one wire from every qubit to the control electronics, leading to a so-called wiring bottleneck for scaling. Demultiplexing via on-chip circuitry offers an…
We present measurements of silicon (Si) metal-oxide-semiconductor (MOS) nanostructures that are fabricated using a process that facilitates essentially arbitrary gate geometries. Stable Coulomb blockade behavior free from the effects of…
Elastic strain engineering utilizes stress to realize unusual material properties. For instance, strain can be used to enhance the electron mobility of a semiconductor, enabling more efficient solar cells and smaller, faster transistors. In…
The quasi-one-dimensional (q1D) material Rb$_2$Mo$_6$Se$_6$ has been proposed to display a nontrivial combination of low-dimensional fluctuations and a dynamical charge density wave (CDW) at ambient pressure. This may lead to a progressive…
Fluctuations in thermal many-particle systems reflect fundamental dynamical processes in both equilibrium and nonequilibrium (NEQ) physics. In NEQ systems \cite{ritort} fluctuations are important in a variety of contexts ranging from…
We have measured the low-frequency time instability known as charge offset drift of Si/SiO$_2$ single electron devices (SEDs) with and without an overall poly-Si top gate. We find that SEDs with a poly-Si top gate have significantly less…
We report the transport characteristics of both electrons and holes through narrow constricted crystalline Si "wall-like" long-channels that were surrounded by a thermally grown SiO2 layer. Importantly, as a result of the existence of fixed…
Electron spins in Si/SiGe quantum wells suffer from nearly degenerate conduction band valleys, which compete with the spin degree of freedom in the formation of qubits. Despite attempts to enhance the valley energy splitting…
We implement silicon quantum dot devices with two layers of gate electrodes using a self-alignment technique, which allows for ultra-small gate lengths and intrinsically perfect layer-to-layer alignment. In a double quantum dot system, we…
We measured the conductance fluctuation of bi- and trilayer graphene devices prepared on mechanical exfoliated graphene by an all-dry, lithography-free process using an ultrathin quartz filament as a shadow mask. Reproducible fluctuations…
Using numerical modeling we study emergence of structure and structure-related nonlinear conduction properties in the self-assembled nanoparticle films. Particularly, we show how different nanoparticle networks emerge within assembly…
Glassy behavior is a generic feature of electrons close to disorder-driven metal-insulator transitions. Deep in the insulating phase, electrons are tightly bound to impurities, and thus classical models for electron glasses have long been…