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Heterogeneous and monolithic integration of the versatile low loss silicon nitride platform with low temperature materials such as silicon electronics and photonics, III-V compound semiconductors, lithium niobate, organics, and glasses, has…

Silicon-nitride-on-insulator photonic circuits have seen tremendous advances in many applications, such as on-chip frequency combs, Lidar, telecommunications, and spectroscopy. So far, the best film quality has been achieved with low…

The availability of thin-film lithium niobate on insulator (LNOI) and advances in processing have led to the emergence of fully integrated LiNbO3 electro-optic devices, including low-voltage, high-speed modulators, electro-optic frequency…

In the past decade, lithium niobate (LiNbO3 or LN) photonics, thanks to its heat-free and fast electro-optical modulation, second-order non-linearities and low loss, has been extensively investigated. Despite numerous demonstrations of…

Integrated photonics has profoundly impacted a wide range of technologies underpinning modern society. The ability to fabricate a complete optical system on a chip offers unrivalled scalability, weight, cost and power efficiency. Over the…

Monolayer transition metal dichalcogenides with direct bandgaps are emerging candidates for microelectronics, nano-photonics, and optoelectronics. Transferred onto photonic integrated circuits (PICs), these semiconductor materials have…

Integrated photonic platforms have proliferated in recent years, each demonstrating its own unique strengths and shortcomings. However, given the processing incompatibilities of different platforms, a formidable challenge in the field of…

The rapid expansion of cloud computing and artificial intelligence has driven the demand for faster optical components in data centres to unprecedented levels. A key advancement in this field is the integration of multiple photonic…

We present an approach to fabrication and packaging of integrated photonic devices that utilizes waveguide and detector layers deposited at near-ambient temperature. All lithography is performed with a 365 nm i-line stepper, facilitating…

We report an electrically actuated, low-loss non-volatile optical switch based on the phase-change material (PCM) Sb2Se3 integrated on a silicon nitride (Si3N4) platform. The device is fabricated using an 8-inch wafer-scale process flow,…

The majority of silicon photonics is built on silicon-on-insulator (SOI) wafers while the majority of electronics, including CPUs and memory, are built on bulk silicon wafers, limiting broader acceptance of silicon photonics. This…

Photonics has been one of the primary beneficiaries of advanced silicon manufacturing. By leveraging on mature complementary metal-oxide-semiconductor (CMOS) process nodes, unprecedented device uniformities and scalability have been…

While photonic integrated circuits (PICs) are being widely used in applications such as telecommunications and datacenter interconnects, PICs capable of replacing bulk optics and fibers in high-precision, highly-coherent applications will…

Co-Packaged Optics applications require scalable and high-yield optical interfacing solutions to silicon photonic chiplets, offering low-loss, broadband, and polarization-independent optical coupling while maintaining compatibility with…

Photonic integrated circuits based on Lithium Niobate have demonstrated the vast capabilities afforded by material with a high Pockels coefficient, allowing linear and high-speed modulators operating at CMOS voltage levels for applications…

Silicon-based integrated photonics has demonstrated significant advances in miniaturization and performance, yet critical challenges remain in achieving efficient on-chip communication at high bandwidths. Plasmonic devices on silicon and…

Nonlinear photonic chips have enabled the generation and processing of signals using only light, with performance far superior to that possible electronically - particularly with respect to speed. Although silicon-on-insulator has been the…

Broadband mid-infrared light sources are highly desired for wide-ranging applications that span free-space communications to spectroscopy. In recent years, silicon has attracted great interest as a platform for nonlinear optical wavelength…

The existing silicon-carbide-on-insulator photonic platform utilizes a thin layer of silicon dioxide under silicon carbide to provide optical confinement and mode isolation. Here, we replace the underneath silicon dioxide layer with a…

Silicon nitride (Si3N4), as a complementary metal-oxide-semiconductor (CMOS) material, finds wide use in modern integrated circuit (IC) technology. The past decade has witnessed tremendous development of Si3N4 in photonic areas, with…