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Doping plays a key role in functionalizing semiconductor devices, yet traditional chemical approaches relying on foreign-atom incorporation suffer from doping-asymmetry, pronounced lattice disorder and constrained spatial resolution. Here,…
For designing an efficient terahertz (THz) emitter, the defect density of the semiconductors is smartly increased to reduce carrier lifetime, which subsequently lowers the overall power output of the semiconductor. To overcome this…
Heavily doped semiconductors are by far the most studied class of materials for thermoelectric applications in the past several decades. They have Seebeck coefficient values which are 2-3 orders of magnitude higher than metals, making them…
Layered van der Waals (vdW) materials are emerging as one of the most versatile directions in the field of quantum condensed matter physics. They allow an unprecedented control of electronic properties via stacking of different types of…
Stacked van der Waals (vdW) heterostructures where semi-conducting two-dimensional (2D) materials are contacted by overlayed graphene electrodes enable atomically-thin, flexible electronics. We use first-principles quantum transport…
A simple two-band model is used to describe the magnitude and temperature dependence of the magnetic susceptibility, Hall coefficient and Seebeck data from undoped and Co doped BaFe2As2. Overlapping rigid parabolic electron and hole bands…
Layered metal-rich subsulfides have become a promising area for exploring intriguing properties such as superconductivity, nontrivial topology, and charge density waves; however, despite their extraordinary potential, they have remained…
Recently, Lu-N-H materials were reported to have room-temperature superconductivity, and the Hubbard U correction on the Lu's $\textit{f}$-electrons is necessary, and a constant U = 5.5 eV was applied to different Lu-N-H configurations…
We report measurements of resistivity, magnetoresistivity, Hall effect, Seebeck coefficient, infrared reflectivity of undoped SmFeAsO and lightly doped SmFeAs(O0.93F0.07) oxypnictides. All the properties measured on SmFeAsO are…
Optically active spin defects in van der Waals (vdW) materials have recently emerged as versatile quantum sensors, enabling applications from nanoscale magnetic field detection to the exploration of novel quantum phenomena in condensed…
Temperature dependent thermoelectric power (TEP) data on Ba(Fe1-xTMx)2As2 (TM = Co and Cu), complemented by the Hall coefficient data on the samples from the same batches, have been measured. For Co-doping we clearly see a change in the…
To be practical, semiconductors need to be doped. Sometimes, to nearly degenerate levels, e.g. in applications such as thermoelectric, transparent electronics or power electronics. However, many materials with finite band gaps are not…
Doped semiconductors are a central and crucial component of all integrated circuits. By using a combination of white light and a focused laser beam, and exploiting hBN defect states, heterostructures of hBN/Graphene/hBN are photodoped…
We present evidence of strong Shubnikov-de-Haas magnetoresistance oscillations in a polarization-doped degenerate three-dimensional electron slab in an Al$_{x}$Ga$_{1-x}$N semiconductor system. The degenerate free carriers are generated by…
We investigated the pressure evolution of the electrical transport in the almost compensated Weyl semimetal TaP. In addition, we obtained information on the modifications of the Fermi-surface topology with pressure from the analysis of…
We study the optical conductivity in the III-V diluted magnetic semiconductor GaMnAs and compare our calculations to available experimental data. Our model study is able to reproduce both qualitatively and quantitatively the observed…
The effects of planar hole concentration, p, on the resistivity, r(T), of sintered Y1-xCaxBa2(Cu1-yZny)3O7-d samples were investigated over a wide range of Ca, Zn, and oxygen contents. Zn was used to suppress superconductivity and this…
The thermoelectric properties of a semiconduct quantum dot chain (SQDC) connected to metallic electrodes are theoretically investigated in the Coulomb blockade regime. An extended Hubbard model is employed to simulate the SQDC system…
We report the Hall resistivity, $\rho_{xy}$ of polycrystalline SmFeAsO$_{1-x}$F$_{x}$ for four different fluorine concentrations from the onset of superconductivity through the collapse of the structural phase transition. For the two more…
We report a high temperature (T = 0.3K) indicator of the excitation gap $\Delta_{5/2}$ at the filling factor $ \nu=5/2$ fractional quantum Hall state in ultra-high quality AlGaAs/GaAs two-dimensional electron gases. As the lack of…