Related papers: Measuring the Kapitza Resistance between a Passiva…
The resistivity and Hall effect in CeNiSn are measured at temperatures down to 35 mK and in magnetic fields up to 20 T with the current applied along the {\it b} axis. The resistivity at zero field exhibits quadratic temperature dependence…
Here we show, with simultaneous transport and photoemission measurements, that the graphene terminated SiC(0001) surface undergoes a metal-insulator transition (MIT) upon dosingwith small amounts of atomic hydrogen. We find the room…
We study dissipation effects for electrons on the surface of liquid helium, which may serve as qubits of a quantum computer. Each electron is localized in a 3D potential well formed by the image potential in helium and the potential from a…
Peltier current lead was proposed to reduce heat leak from the current lead. The temperature of the hot side of semiconductors was kept to be room temperature and the liquid nitrogen was used to cool the system in the experiment. The…
Graphene has the great potential to be used for humidity sensing due to ultrahigh surface area and conductivity. However, the impact of different atomic layers of graphene on SiO2/Si substrate on the humidity sensing have not been studied…
We investigate the effect on a Quantum Hall (QH) liquid of its coupling to 3+1 dimensional dynamical electromagnetism, which renders the system gapless. We calculate both the Hall and longitudinal resistances, $\rho_H$ and $\rho_L$, in the…
Graphene has drawn wide attention due to its exceptional thermal conductivity but complete understanding of thermal characteristics of polycrystalline graphene is still elusive to date. For the first time, herein, we have systematically…
Contact resistivity rc of InP and GaAs based ohmic contacts was measured in the 4.2/300 K temperature range. Nonmonotonic dependences rc(T), with a minimum at temperature 50 K (150 K) for InP (GaAs) based contacts were obtained. The results…
In this study, we investigated the graphene-ionic liquid (EMImBF4) interface to clarify the effects of ambient temperature and potential on the differential capacitance. We complemented molecular dynamics simulations with density functional…
By measuring the electrical transport properties of superconducting NbN quarter-wave resonators in direct contact with a helium bath, we have demonstrated a high-speed and spatially sensitive sensor for the permittivity of helium. In our…
We demonstrate saturable absorber behavior of n-type semiconductors GaAs, GaP and Ge in THz frequency range at room temperature using nonlinear THz spectroscopy. The saturation mechanism is based on a decrease in electron conductivity of…
The properties of liquid helium have always been a fascinating subject to scientists. The phonon theory of liquids taking into account liquid non-static shear rigidity is employed here for studying internal energy and heat capacity of…
The Hall and Seebeck coefficients, electrical resistivity and thermal conductivity of polycrystalline NiSi3P4 were characterized from 2 to 775K. Undoped NiSi3P4 behaves like a narrow gap semiconductor, with activated electrical resistivity…
We discuss the crystallization process from the supersaturated melt in terms of its non-equilibrium properties. In particular, we quantify the amount of heat that is produced irreversibly when a suspension of hard spheres crystallizes. This…
We present a model of a strongly correlated system with a non-Fermi liquid high temperature phase. Its ground state undergoes an insulator to superconductor quantum phase transition (QPT) as a function of a pairing interaction strength.…
The compressibility of solid helium (3He and 4He) in the hcp and fcc phases has been studied by path-integral Monte Carlo. Simulations were carried out in both canonical (NVT) and isothermal-isobaric (NPT) ensembles at temperatures between…
In order to clarify the physics of the gating of solids by ionic liquids (ILs) we have gated lightly doped $p$-Si, which is so well studied that it can be called the "hydrogen atom of solid state physics" and can be used as a test bed for…
We have analyzed the breakdown of the quantum Hall effect in 1 micrometer wide Hall devices fabricated from an exfoliated monolayer graphene transferred on SiOx. We have observed that the deviation of the Hall resistance from its quantized…
Although over the past number of years there have been many advances in the materials aspects of topological insulators (TI), one of the ongoing challenges with these materials is the protection of them against aging. In particular, the…
We have measured the quantum critical behavior of the plateau-insulator (PI) transition in a low-mobility InGaAs/GaAs quantum well. The longitudinal resistivity measured for two different values of the electron density follows an…