Related papers: Measuring the Kapitza Resistance between a Passiva…
In this study, the synergistic effect of the particle size of the dispersed phase and the interface thermal resistance (R$_{int}$) between the phases on the phonon thermal conductivity ($\kappa_{ph}$) of the…
Capping layers are essential for protecting phase change materials (PCMs) used in non-volatile photonics technologies. This work demonstrates how $(ZnS)_{0.8}-(SiO_2)_{0.2}$ caps radically influence the performance of $Sb_{2}S_{3}$ and…
Following letter introduces a theoretical approach to investigate the effect of two-step GaN barrier layer growth methodology on the performance of InGaN/GaN MQW solar cell, in which a lower temperature GaN cap layer was grown on top of…
Thermal gradients impart thermophoretic forces on colloidal particles, pushing colloids towards cold or hot regions, a phenomenon called thermophoresis. Current theoretical approaches relate the Soret coefficient to local changes in the…
Electrostatic interactions in nanoscale systems can influence the heat transfer mechanism and interfacial properties. This study uses molecular dynamics simulations to investigate the impact of various electrostatic interactions on the…
The resistivity as function of temperature of high temperature superconductors is very unusual and despite its importance lacks an unified theoretical explanation. It is linear with the temperature for overdoped compounds but it falls more…
Experimental studies of the transitions from a primary quantum Hall (QH) liquid at filling factor 1/k (with k an odd integer) to the insulator have indicated a ``quantized Hall insulator'' (QHI) behavior: while the longitudinal resistivity…
Freestanding silicon nitride membranes with thicknesses down to a few tens of nanometers find use as TEM windows or soft X-ray spectral purity filters. As the thickness of a membrane decreases, emissivity vanishes, which limits radiative…
We measured the low temperature subgap resistance of titanium nitride (superconductor, Tc=4.6K)/highly doped silicon (degenerated semiconductor) SIN junctions, where I stands for the Schottky barrier. At low energies, the subgap conductance…
Suspending devices on thin SiN membranes can limit their interaction with the bulk substrate and reduce parasitic capacitance to ground. While suspending devices on membranes is used in many fields including radiation detection using…
The effect of a two dimensional (2D) graphene layer (GL) on top of the silicon nitride (SiN) passivation layer of AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) has been systematically analyzed.…
During the fabrication process of large scale silicene through common chemical vapor deposition (CVD) technique, polycrystalline films are quite likely to be produced, and the existence of Kapitza thermal resistance along grain boundaries…
We present first experimental data on the high energy behavior of helium atoms quantum reflecting from the nanoscopically disordered surface of a quartz crystal. The use of the light, stable and inert He atom not only opens the unique…
We study the quantum reflection of ultracold antihydrogen atoms bouncing on the surface of a liquid helium film. The Casimir-Polder potential and quantum reflection are calculated for different thicknesses of the film supported by different…
A parameter free calculation of the resistivity is applied to liquid metals near the melting point ranging from weak to strong scattering limit. The method is based on length dependent resistance calculations for quasi-one dimensional…
Si doped ZnO thin films with Si concentrations ranging from 0.4 to 10 % have been grown by sequential pulsed laser deposition on sapphire substrates. The resistivity of the films first decreased from ~ 6.6x10-3 to 4.7x10-4 ohm-cm as the Si…
Numerical investigations are conducted to study the effect of factors such as particle clustering and interfacial layer thickness on thermal conductivity of nanofluids. Based on this, parameters including Kapitza radius, and fractal and…
Reflectance of silicon photomultipliers (SiPMs) is an important aspect to understand the large scale SiPM-based detector systems and evaluate the performance of SiPMs. We report the reflactance of two SiPMs, NUV-HD-lowCT and S14160-60-50HS…
We study heat transport across individual grain boundaries in suspended monolayer graphene using extensive classical molecular dynamics (MD) simulations. We construct bicrystalline graphene samples containing grain boundaries with symmetric…
The importance of dissipation engineering ranges from universal quantum computation to non-equilibrium quantum thermodynamics. In recent years, more and more theoretical and experimental studies have shown the relevance of this topic for…