Related papers: Low frequency noise in AC biased metallic tunnel j…
Quantum mechanics can strongly influence the noise properties of mesoscopic devices. To probe this effect we have measured the current fluctuations at high-frequency (5-90G Hz) using a superconductor-insulator-superconductor tunnel junction…
We use an analytic approach to study the susceptibility of the Planck Low Frequency Instrument radiometers to various systematic effects. We examine the effects of fluctuations in amplifier gain, in amplifier noise temperature and in the…
Low frequency electrical noise measurements have been used to probe the electronic state of the perovskite-type manganese oxide Pr2/3Ca1/3MnO3 versus temperature and in the vicinity of the field-induced transition from the insulating,…
Measurements of the low frequency electrical noise in the ferromagnetic semiconductor (Ga,Mn)As reveal an enhanced integrated noise at low temperature. For moderate localization, we find a 1/f normalized power spectrum density over the…
We have measured the resistance and the 1/f resistance noise of a two-dimensional low density hole system in a high mobility GaAs quantum well at low temperature. At densities lower than the metal-insulator transition one, the temperature…
The electric transport properties of superconducting FeSe0.3Te0.7/Au c-axis (S/N) junctions, fabricated by using Pulsed Laser Deposition technique, have been investigated in the temperature range of 2 K to the superconducting transition…
We investigate the noise current in a thermally biased tunnel junction between two superconductors with different zero-temperature gaps. When the Josephson effect is suppressed, this structure can support a nonlinear thermoelectric effect…
We report the results of theoretical investigations of low frequency tunneling current noise spectra component (1/f^{\alpha}). Localized states of individual impurity atoms play the key role in low frequency tunneling current noise…
Hg$_{1-x}$Cd$_x$Te is a unique material with the band-gap tunable by the temperature, pressure, and cadmium content in a wide range, from 1.6 eV to inverted band-gap of -0.3 eV. This makes Hg$_{1-x}$Cd$_x$Te one of the key materials for…
The nature of the low-frequency current fluctuations, i.e. carrier number vs. mobility, defines the strategies for noise reduction in electronic devices. While the 1/f noise in metals has been attributed to the electron mobility…
Ubiquitous low frequency 1/f noise can be a limiting factor in the performance and application of nanoscale devices. Here, we quantitatively investigate low frequency electronic noise in single-layer transition metal dichalcogenide MoS2…
It is shown, with citing tunnel junction as an example, that mutual interplay of electron quantum transfers in a conducting system can be the fast mechanism for generation fundamental low-frequency flicker conductance fluctuations (1/f…
We report on measurements of low frequency noise in a single electron transistor from a few Hz up to 10 MHz. Measurements were done for different bias and gate voltages, which allows us to separate noise contributions from different noise…
We consider partially gapped one dimensional (1D) conductors connected to normal leads, as realized in fractional helical wires. At certain electron densities, some distinct charge mode develops a gap due to electron interactions, leading…
We study current fluctuations in tunnel junctions driven by a voltage source. The voltage is applied to the tunneling element via an impedance providing an electromagnetic environment of the junction. We use circuit theory to relate the…
New experiments that measure the low-frequency shot-noise spectrum at local tunneling contacts on mesoscopic structures are proposed. The current fluctuation spectrum at a single tunneling tip is determined by local partial densities of…
A singularity at the Josephson frequency in the noise spectral density of a disordered normal metal -- superconductor junction is predicted for bias voltages below the superconducting gap. The non-stationary Aharonov-Bohm effect, recently…
The accurate analytical solution for the low temperature $1/f$ noise in a microwave dielectric constant of amorphous films containing tunneling two-level systems (TLSs) is derived within the standard tunneling model including the weak…
We present measurements of the dynamical response of thermal noise to an ac excitation in conductors at low temperature. From the frequency dependence of this response function - the noise thermal impedance - in the range 1 kHz-1 GHz we…
We present current noise measurements in a long diffusive superconductor-normal-metal-superconductor junction in the low voltage regime, in which transport can be partially described in terms of coherent multiple Andreev reflections. We…