Related papers: Avoided metallicity in a hole-doped Mott insulator…
The doping of semiconductor materials is a fundamental part of modern technology, but the classical approaches have in many cases reached their limits both in regard to achievable charge carrier density, as well as mobility. Modulation…
We study the effects of dilute La and Rh doping on the electronic structure of the relativistic Mott insulator Sr$_2$IrO$_4$ using fully relativistic and magnetically non-collinear density functional theory with the inclusion of an on-site…
The interplay between strong electronic correlations and the inherent frustration of certain lattice geometries is a common mechanism for the formation of nontrivial states of matter. In this work, we theoretically explore the collective…
A Mott insulator sometimes induces unconventional superconductivity in its neighbors when doped and/or pressurized. Because the phase diagram should be strongly related to the microscopic mechanism of the superconductivity, it is important…
The phenomenon of Mott insulation involves the localization of itinerant electrons due to strong local repulsion. Upon doping, a pseudogap (PG) phase emerges - marked by selective gapping of the Fermi surface without conventional symmetry…
With the hierarchical Green's function approach, we study a doped Mott insulator described with the Hubbard model by analytically solving the equations of motion of an one-particle Green's function and related multiple-point correlation…
Theoretical studies on charge ordering phenomena in quarter-filled molecular (organic) conductors are reviewed. Extended Hubbard models including not only the on-site but also the inter-site Coulomb repulsion are constructed in a…
In cuprate high-temperature superconductors, an antiferromagnetic Mott insulating state can be destabilized toward unconventional superconductivity by either hole- or electron-doping. In addition to these two electronic phases there is now…
We argue that interesting strongly correlated two-dimensional electron systems can be created by modulation doping near a heterojunction between Mott insulators. Because the dopant atoms are remote from the carrier system, the electronic…
High temperature superconductivity in cuprates arises from doping a parent Mott insulator by electrons or holes. A central issue is how the Mott gap evolves and the low-energy states emerge with doping. Here we report angle-resolved…
Solid state synthesis and physical mechanisms of electrical conductivity variation in polycrystalline, strontium doped indium oxide In2O3:(SrO)x were investigated for materials with different doping levels at different temperatures…
It is widely recognised that the effect of doping into a Mott insulator is complicated and unpredictable, as can be seen by examining the Hall coefficient in high $T_{\rm c}$ cuprates. The doping effect, including the electron-hole doping…
The effect of proximity to a Mott insulating phase on the charge transport properties of a superconductor is determined. An action describing the low energy physics is formulated and different scenarios for the approach to the Mott phase…
A two-step doping process, magnetic followed by charge or vice versa, is required to produce insulating massive surface states in topological insulators for many physics and device applications. Using first-principles calculations, we…
The Mott transistor is a paradigm for a new class of electronic devices---often referred to by the term Mottronics---, which are based on charge correlations between the electrons. Since correlation-induced insulating phases of most oxide…
We investigate the phase diagram of spinless bosons with long range (~ 1/r^3) repulsive interactions, relevant to ultracold polarized atoms or molecules, using DMRG. Between the two conventional insulating phases, the Mott and density wave…
The metal-insulator transition in VO2 was investigated using the three-band Hubbard model, in which the degeneracy of the 3d orbitals, the on-site Coulomb and exchange interactions, and the effects of lattice distortion were considered. A…
We investigate superconductivity that may exist in the doped BaCoSO, a multi-orbital Mott insulator with a strong antiferromagnetic ground state. The superconductivity is studied in both t-J type and Hubbard type multi-orbital models by…
High-temperature superconductivity in cuprates emerges upon doping the parent Mott insulator. Robust signatures of the low-doped electronic state include a Hall carrier density that initially tracks the number of doped holes and the…
The spectral properties of a one-dimensional (1D) single-chain Mott insulator Sr$_2$CuO$_{3}$ have been studied in angle-resolved photoemission and optical spectroscopy, at half filling and with small concentrations of extra charge doped…