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Recent advances in the development of ultra-low loss silicon nitride (Si3N4)-based photonic integrated circuits have allowed integrated lasers to achieve a coherence exceeding those of fiber lasers and enabled unprecedentedly fast…
Erbium-doped fiber amplifiers have revolutionized long-haul optical communications and laser technology. Erbium ions could equally provide a basis for efficient optical amplification in photonic integrated circuits. However, this approach…
The ability to amplify optical signals is of paramount importance in photonic integrated circuits (PICs). Recently, lithium niobate on insulator (LNOI) has attracted increasing interests as an emerging PIC platform. However, the shortage of…
Recent advances in the development of ultra-low loss silicon nitride integrated photonic circuits have heralded a new generation of integrated lasers capable of reaching fiber laser coherence. However, these devices presently are based on…
Thin film lithium niobate (TFLN) based electro-optic modulator is widely applied in the field of broadband optical communications due to its advantages such as large bandwidth, high extinction ratio, and low optical loss, bringing new…
Silicon nitride (SiN) waveguides with ultra-low optical loss enable integrated photonic applications including low noise, narrow linewidth lasers, chip-scale nonlinear photonics, and microwave photonics. Lasers are key components to SiN…
Rapid progress in photonics has led to an explosion of integrated devices that promise to deliver the same performance as table-top technology at the nanoscale; heralding the next generation of optical communications, sensing and metrology,…
Rare-earth-doped materials constitute the foundation of conventional solid-state lasers, but their bulk-crystal form is inherently incompatible with photonic integration, making it challenging to realize compact, high performance nanoscale…
In the past decade, photonic integrated circuits (PICs) based on thin-film lithium niobate (TFLN) have advanced in various fields, including optical communication, nonlinear photonics, and quantum optics. A critical component is an…
Recent advances in the processing of thin-film LNOI have enabled low-loss photonic integrated circuits, modulators with improved half-wave voltage, electro-optic frequency combs and novel on-chip electro-optic devices, with applications…
Ultra-low noise lasers are essential tools in a wide variety of applications, including data communication, light detection and ranging (LiDAR), quantum computing and sensing, and optical metrology. Recent advances in integrated photonics,…
Lasers that combine narrow linewidths with rapid tunability are critical for applications such as coherent optical ranging, distributed fiber-optic sensing, and precision spectroscopy. Despite significant progress in integrated laser…
Lab-on-a-Chip (LoC) devices combining microfluidic analyte provision with integrated optical analysis are highly desirable for several applications in biological oder medical sciences. While the microfluidic approach is already broadly…
Integrated optical amplifiers and light sources are of great significance for photonic integrated circuits (PICs) and have attracted many research interests. Doping rare-earth ions in materials as a solution to realize efficient optical…
Silicon photonic integration has gained great success in many application fields owing to the excellent optical device properties and complementary metal-oxide semiconductor (CMOS) compatibility. Realizing monolithic integration of III-V…
Coherent optics has profoundly impacted diverse applications ranging from communications, LiDAR to quantum computations. However, building coherent systems in integrated photonics previously came at great expense in hardware integration and…
Here we show a photonic computing accelerator utilizing a system-level thin-film lithium niobate circuit which overcomes this limitation. Leveraging the strong electro-optic (Pockels) effect and the scalability of this platform, we…
We demonstrate high-power thin film lithium niobate (TFLN) erbium-doped waveguide amplifier (EDWA) with a maximum on-chip output power of 113 mW and a gain of 16 dB. The on-chip integrated EDWA is composed of large mode area (LMA) waveguide…
With the advantages of large electro-optical coefficient, wide transparency window, and strong optical confinement, thin-film lithium niobate (TFLN) technique has enabled the development of various high-performance optoelectronics devices,…
Erbium doped integrated waveguide amplifier and laser prevail in power consumption, footprint, stability and scalability over the counterparts in bulk materials, underpinning the lightwave communication and large-scale sensing. Subject to…