Related papers: Gate modulation of the hole singlet-triplet qubit …
Holes in Ge/SiGe heterostructures are now a leading platform for semiconductor spin qubits, thanks to the high confinement quality, two-dimensional arrays, high tunability, and larger gate structure dimensions. One limiting factor for the…
Hole spin qubits in planar germanium heterostructures are frontrunners for scalable semiconductor quantum computing. However, their current performance is mostly limited by large dot-to-dot variability that leads to uncontrolled qubit…
We show that the g-factor and the spin-flip time T_{1} of a heterojunction quantum dot is very sensitive to the band-bending interface electric field even in the absence of wave function penetration into the barrier. When this electric…
We report on hole g-factor measurements in three terminal SiGe self-assembled quantum dot devices with a top gate electrode positioned very close to the nanostructure. Measurements of both the perpendicular as well as the parallel g-factor…
Spin qubits are typically operated in the lowest orbital of a quantum dot to minimize interference from nearby states. In valence-band hole systems, strong spin-orbit coupling links spin and orbital degrees of freedom, strongly influencing…
In a semiconductor spin qubit with sizable spin-orbit coupling, coherent spin rotations can be driven by a resonant gate-voltage modulation. Recently, we have exploited this opportunity in the experimental demonstration of a hole spin qubit…
Gate geometry and bias asymmetry can be used to engineer spin dynamics in gate-defined Ge hole quantum dots by reshaping the confinement potential and driving transitions between distinct confinement regimes. In this work, we show that…
Strong electrically tunable exciton g-factors are observed in individual (Ga)InAs self-assembled quantum dots and the microscopic origin of the effect is explained. Realistic eight band k.p simulations quantitatively account for our…
Quantum computers require the systematic operation of qubits with high fidelity. For holes in germanium, the spin-orbit interaction allows for \textit{in situ} electric fast and high-fidelity qubit gates. However, the interaction also…
We present a design and modeling of a scalable quantum processor architecture utilizing hole-spin qubits defined in gate-controlled germanium (Ge) quantum dots, where coherent spin-phonon coupling is predicted to facilitate qubit…
Superconductors and semiconductors are crucial platforms in the field of quantum computing. They can be combined to hybrids, bringing together physical properties that enable the discovery of new emergent phenomena and provide novel…
In semiconductor hole spin qubits, low magnetic field ($B$) operation extends the coherence time ($T_\mathrm{2}^*$) but proportionally reduces the gate speed. In contrast, singlet-triplet (ST) qubits are primarily controlled by the exchange…
Single spins in the solid-state offer a unique opportunity to store and manipulate quantum information, and to perform quantum-enhanced sensing of local fields and charges. Optical control of these systems using techniques developed in…
The feasibility of high-fidelity single-qubit operations of a hole spin in a quantum dot molecule by electric g tensor control is demonstrated. Apart from a constant external magnetic field the proposed scheme allows for an exclusively…
Electrically tunable g-factors in quantum dots are highly desirable for applications in quantum computing and spintronics. We report giant modulation of the hole g-factor in a SiGe nanocrystal when an electric field is applied to the…
The strong spin-orbit interaction in silicon and germanium hole quantum dots enables all-electric microwave control of single spins but is unsuited for multi-spin exchange-only qubits that rely on scalable discrete signals to suppress…
We report a large g-factor tunability of a single hole spin in an InGaAs quantum dot via an electric field. The magnetic field lies in the in-plane direction x, the direction required for a coherent hole spin. The electrical field lies…
The rapid progress of hole spin qubits in group IV semiconductors has been driven by their potential for scalability. This is owed to the compatibility with industrial manufacturing standards, as well as the ease of operation and…
The dependence of the g-factors of semiconductor donors on applied electric and magnetic fields is of immense importance in spin based quantum computation and in semiconductor spintronics. The donor g-factor Stark shift is sensitive to the…
The large spin-orbit coupling in the valence band of group IV semiconductors provides an electric field knob for spin-qubit manipulation. This fact can be exploited with acceptor based qubits. Spin manipulation of holes bound to acceptors…