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Silicon color centers (SiCCs) have recently emerged as potential building blocks for light emitters in Si photonics, quantum emitters with spin storage capabilities, and Si-based quantum repeaters. We have recently developed a non-invasive…

Mesoscale and Nanoscale Physics · Physics 2024-08-27 Andreas Salomon , Johannes Aberl , Enrique Prado Navarrete , Merve Karaman , Ádám Gali , Thomas Fromherz , Moritz Brehm

The development of color centers in silicon enables scalable quantum technologies by combining telecom-wavelength emission and compatibility with mature silicon fabrication. However, large-scale integration requires precise control of each…

The recent demonstration of optically active telecom emitters makes silicon a compelling candidate for solid state quantum photonic platforms. Particularly fabrication of the G center has been demonstrated in carbon-rich silicon upon…

Silicon-based color-centers (SiCCs) have recently emerged as quantum-light sources that can be combined with telecom-range Si Photonics platforms. Unfortunately, using current SiCC fabrication, deterministic control over the vertical…

Color centers in silicon are emerging as promising platforms for quantum technologies. Among them, the G center has attracted considerable interest owing to its bright telecom O-band single-photon emission and its optically addressable…

The study of defect centers in silicon has been recently reinvigorated by their potential applications in optical quantum information processing. A number of silicon defect centers emit single photons in the telecommunication $O$-band,…

Color center platforms have been at the forefront of quantum nanophotonics for applications in quantum networking, computing, and sensing. However, large-scale deployment of this technology has been stifled by a lack of ability to integrate…

Quantum technologies would benefit from the development of high performance quantum defects acting as single-photon emitters or spin-photon interface. Finding such a quantum defect in silicon is especially appealing in view of its favorable…

Materials Science · Physics 2024-05-09 Yihuang Xiong , Jiongzhi Zheng , Shay McBride , Xueyue Zhang , Sinéad M. Griffin , Geoffroy Hautier

Colloidal semiconductor quantum dots are robust emitters implemented in numerous prototype and commercial optoelectronic devices. However, active fluorescence color tuning, achieved so far by electric-field induced Stark effect, has been…

Mesoscale and Nanoscale Physics · Physics 2023-05-16 Yonatan Ossia , Adar Levi , Yossef E. Panfil , Somnath Koley , Einav Scharf , Nadav Chefetz , Sergei Remennik , Atzmon Vakahi , Uri Banin

A highly promising route to scale millions of qubits is to use quantum photonic integrated circuits (PICs), where deterministic photon sources, reconfigurable optical elements, and single-photon detectors are monolithically integrated on…

We addressed the carrier dynamics in so-called G-centers in silicon (consisting of substitutional-interstitial carbon pairs interacting with interstitial silicons) obtained via ion implantation into a silicon-on-insulator wafer. For this…

Color center is a promising platform for quantum technologies, but their application is hindered by the typically random defect distribution and complex mesoscopic environment. Employing cathodoluminescence, we demonstrate that an…

We create and isolate single-photon emitters with a high brightness approaching $10^5$ counts per second in commercial silicon-on-insulator (SOI) wafers. The emission occurs in the infrared spectral range with a spectrally narrow zero…

Applied Physics · Physics 2020-08-24 M. Hollenbach , Y. Berencén , U. Kentsch , M. Helm , G. V. Astakhov

Global quantum networks will benefit from the reliable creation and control of high-performance solid-state telecom photon-spin interfaces. T radiation damage centres in silicon provide a promising photon-spin interface due to their narrow…

Atomic-scale crystal defects in Si are quantum-light sources offering tantalizing integration with existing photonic technologies. Yet, the controlled creation of near-infrared color centers for long- haul quantum communication and…

The performance of modular, networked quantum technologies will be strongly dependent upon the quality of their quantum light-matter interconnects. Solid-state colour centres, and in particular T centres in silicon, offer competitive…

Color centers in wide band gap semiconductors are prominent candidates for solid-state quantum technologies due to their attractive properties including optical interfacing, long coherence times, spin-photon and spin-spin entanglement, as…

Quantum Physics · Physics 2024-06-19 Sridhar Majety , Pranta Saha , Victoria A. Norman , Marina Radulaski

Light-emitting complex defects in silicon have been considered a potential platform for quantum technologies based on spin and photon degrees of freedom working at telecom wavelengths. Their integration in complex devices is still in its…

Colour centres in silicon have great potential as single photon sources for quantum technologies. Some of them - like the T centre - also possess optically-active spins that enable spin-photon interfaces for generating entangled photons and…

Silicon is host to two separate leading quantum technology platforms: integrated silicon photonics as well as long-lived spin qubits. There is an ongoing search for the ideal photon-spin interface able to hybridize these two approaches into…

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