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Defects in 2D materials are becoming prominent candidates for quantum emitters and scalable optoelectronic applications. However, several physical properties that characterize their behavior, such as charged defect ionization energies, are…
We present a detailed study of common intrinsic defects in CuInS$_2$ and CuGaS$_2$ using the Heyd, Scuseria and Ernzerhof (HSE) hybrid functional scheme. The impact of the two HSE parameters, $\alpha$ and $\omega$ on the band gap and…
WSRT observations have been used to investigate the presence of neutral hydrogen in extremely young radio galaxies. These objects were selected from a sample of High-Frequency Peakers (HFPs). We detect 2 of the 6 observed galaxies…
Issues of Ge hut array formation and growth at low temperatures on the Ge/Si(001) wetting layer are discussed on the basis of explorations performed by high resolution STM and in-situ RHEED. Data of HRTEM studies of multilayer Ge/Si…
InP based dilute Bismide InGaAsBi material is emerging as a promising candidate for extending short wavelength infrared detection. One critical factor to limit the performance of these InGaAsBi photodiodes is dark current caused by defects…
We provide direct evidence that the broad Z$_{1/2}$ peak, commonly observed by conventional DLTS in as-grown and at high concentrations in radiation damaged $4H$-SiC, has two components, namely Z$_{1}$ and Z$_{2}$, with activation energies…
A few-micron thick structure that shows nearly 100% resonant polarized absorptance at a predefined midinfrared wavelength is designed and simulated. Like resonant-cavity enhanced photodetector structure, it contains a thin absorber enclosed…
We use density functional theory (DFT) with non-empirically tuned screened range-separated hybrid (SRSH) functionals to calculate the electronic properties of native zinc and oxygen vacancy point defects in ZnO, and we predict their defect…
Hybrid functionals' non-local exchange-correlation potential contains a derivative discontinuity that improves on standard semi-local density functional theory (DFT) band gaps. Moreover, by careful parameterization, hybrid functionals can…
Since the launch of the Einstein X-ray Observatory in the 1970s, a number of broad absorption features have been reported in the X-ray spectra of BL Lac objects. These features are often interpreted as arising from high velocity outflows…
Acceptor-type defects in highly n-type InN are probed using positron annihilation spectroscopy. Results are compared to Hall effect measurements and calculated electron mobilities. Based on this, self-compensation in n-type InN is studied…
Moir\'e materials offer a versatile platform for engineering excitons with unprecedented control, promising next-generation optoelectronic applications. While continuum models are widely used to study moir\'e excitons due to their…
While Cadmium Telluride (CdTe) excels in terms of photon radiation absorption properties and outperforms silicon (Si) in this respect, the crystal growth, characterization and processing into a radiation detector is much more complicated.…
Atomic defects underpin the properties of van der Waals materials, and their understanding is essential for advancing quantum and energy technologies. Scanning transmission electron microscopy is a powerful tool for defect identification in…
The interplay between superconductivity and charge-density wave (CDW) order, and its evolution with carrier density, is central to the physics of many quantum materials, notably high-$T_c$ cuprates and kagome metals. Hole-doped kagome…
We investigate acceptor and donor states in GaN nanocrystals doped with a single substitutional impurity. Quantum dots (QD's) of zinc-blende structure and spherical shape are considered with the radius ranging from 4.5 to 67.7 A. The…
We study hot electron transport in short-channel suspended multilayer graphene devices created by a distinct experimental approach. For devices with semi-transparent contact barriers, a dip of differential conductance (dI/dV) has been…
We have fabricated electric double-layer field-effect devices to electrostatically dope our active materials, either $x$=0.015 Ga$_{1-x}$Mn$_x$As or $x$=3.2$\times10^{-4}$ Ga$_{1-x}$Be$_x$As. The devices are tailored for interrogation of…
Semiconducting transition metal dichalcogenides (TMDs) have emerged as materials that can be used to realize two-dimensional (2D) crystals possessing rather unique transport and optical properties. Most research has so far focused on sulfur…
Ho2Ir3Si5 belongs to the family of three-dimensional (3D) R2Ir3Si5 (R = Lu, Er and Ho) compounds that exhibit a colossal first-order charge density wave (CDW) transition where there is a strong orthorhombic-to-triclinic distortion of the…