Related papers: Towards Ultimate Memory with Single-Molecule Multi…
The magnetoelectric effects in multiferroics have a great potential in creating next-generation memory devices. We conceive a new concept of non-volatile memories based on a type of nonlinear magnetoelectric effects showing a…
Multiferroics, materials where spontaneous long-range magnetic and dipolar orders coexist, represent an attractive class of compounds, which combine rich and fascinating fundamental physics with a technologically appealing potential for…
The coexistence and coupling between magnetization and electric polarization in multiferroic materials provide extra degrees of freedom for creating next-generation memory devices. A variety of concepts of multiferroic or magnetoelectric…
Multiferroics, defined for those multifunctional materials in which two or more kinds of fundamental ferroicities coexist, have become one of the hottest topics of condensed matter physics and materials science in recent years. The…
The development of new computing technologies has given a new stimulus in the study of multiferroics. The use of multiferroics allows the realization of competitive energy efficient scalable logic and storage devices. The low-power…
Materials that combine magnetic and ferroelectric properties have generated increasing interest over the last few years, due to both their diverse properties and their potential utility in new types of magnetoelectric device applications.…
The primary impediment to continued downscaling of traditional charge-based electronic devices in accordance with Moore's law is the excessive energy dissipation that takes place in the device during switching of bits. One very promising…
Magnons, bosonic quasiparticles carrying angular momentum, can flow through insulators for information transmission with minimal power dissipation. However, it remains challenging to develop a magnon-based logic due to the lack of efficient…
This paper presents the process optimization of a single-electron nanoflash electron memory. Self-aligned single dot memory structures have been fabricated using a wet anisotropic oxidation of a silicon nanowire. One of the main issue was…
Multiferroics are those materials with more than one ferroic order, and magnetoelectricity refers to the mutual coupling between magnetism and electricity. The discipline of multiferroicity has never been so highly active as that in the…
According to Moore law, the silicon semiconductor transistor based information system is facing its physical limitations due to fluctuations of random charge and leakage current. Molecular electronics is becoming more and more attractive…
Mutiferroics are a novel class of next generation multifunctional materials, which display simultaneous magnetic spin, electric dipole, and ferroelastic ordering, and have drawn increasing interest due to their multi-functionality for a…
Multiferroic materials, in which ferroelectric and magnetic ordering coexist, are of fundamental interest for the development of novel memory devices that allow for electrical writing and non-destructive magnetic readout operation. The…
To store information at extremely high-density and data-rate, we propose to adapt, integrate, and extend the techniques developed by chemists and molecular biologists for the purpose of manipulating biological and other macromolecules. In…
Nowdays, multiferroic materials with magnetoelectric coupling have many real-world applications in the fields of novel memory devices. It is challenging is to create multiferroic materials with strongly coupled ferroelectric and…
Well-protected magnetization, tunable quantum states and long coherence time are desired for the use of magnetic molecules in spintronics and quantum information technologies. In this work, endohedral fullerene molecules M@C28 with…
The use of single molecules to design electronic devices is an extremely challenging and fundamentally different approach to further downsizing electronic circuits. Two-terminal molecular devices such as diodes were first predicted [1] and,…
Two-dimensional (2D) multiferroic materials with controllable magnetism have promising prospects in miniaturized quantum device applications, such as high-density data storage and spintronic devices. Here, using first-principles…
We propose a new type of magnetoelectric memory device that stores magnetic easy-axis information or pseudo-magnetization, rather than a definite magnetization direction, in piezoelectric/ferromagnetic (PE/FM) heterostructures.…
Multiferroic materials, which simultaneously exhibit ferroelectricity and magnetism, have attracted substantial attention due to their fascinating physical properties and potential technological applications. With the trends towards device…