Related papers: A practical theoretical model for Ge-like epitaxia…
A method for modeling the full steady-state and small-signal behavior of practical capacitive structures, such as metal-insulator-metal capacitors, diodes, and transistors, is presented. Simple lumped element models fail to properly…
We have presented a compact MOSFET model, which allows us to describe the I-V characteristics of irradiated long-channel and short-channel transistors in all operation modes at different measurement temperatures and interface trap…
A fitting model is developed for accounting the asymmetric ambipolarities in the I-V characteristics of graphene field-effect transistors (G-FETs) with doped channels, originating from the thermionic emission and interband tunneling at the…
To be practical, semiconductors need to be doped. Sometimes, to nearly degenerate levels, e.g. in applications such as thermoelectric, transparent electronics or power electronics. However, many materials with finite band gaps are not…
Quantum electronic devices at the single impurity level demand an understanding of the physical attributes of dopants at an unprecedented accuracy. Germanium-based technologies have been developed recently, creating a necessity to adapt the…
Recent experiments and continuum modeling work on dopant diffusion and segregation, Si-Ge interdiffusion, and defect engineering in SiGe material systems are reviewed. Doping impact on Ge thin film quality and interdiffusion is also…
Transport through molecular devices with weak tunnel coupling to the leads but with strong coupling to a single vibrational mode is considered in the case where the vibration is damped by coupling to the environment. In particular, we…
Iontronics combines ions as charge carriers with electronic-like operations, enabling unique information processing, chemical regulation, and enhanced bio-integrability. Standard simulation tools encounter difficulties in effectively…
Electronic transport properties of Au nano-structure are investigated using both experimental and theoretical analysis. Experimentally, stable Au nanowires were created using mechanically controllable break junction in air, and simultaneous…
Extensive studies on thin films indicated a generic cubic current-voltage $I-V$ dependence as a salient feature of charge transport by tunneling. A quick glance at $I-V$ data for molecular junctions suggests a qualitatively similar…
Charge profiles in liquid electrolytes are of crucial importance for applications, such as supercapacitors, fuel cells, batteries, or the self-assembly of particles in colloidal or biological settings. However, creating localised (screened)…
Ge-on-Si structures with three different dopants (P, As and B) and those without intentional doping were grown and annealed. Several different materials characterization methods have been performed to characterize the Ge film quality. All…
We present the results of measurements of bulk current-voltage (I-V) characteristics and local surface I-V characteristics by atomic force microscopy (AFM) of iodine-doped PbS films. It is established that bulk I-V curves of both undoped…
Combining scanning tunneling microscopy and angle-resolved photoemission spectroscopy, we demonstrate how to tune the doping of epitaxial graphene from p to n by exploiting the structural changes that occur spontaneously on the Ge surface…
New electrode materials for alkaline-ion batteries are a timely topic. Among many promising candidates, V2O5 is one of the most interesting cathode materials. While having very high theoretical capacity, in practice, its performance is…
We present a comparative study of the optical and material property dependences of VCSELs on Ge or GaAs substrate thicknesses and epitaxy process conditions. It was found that adjusting the Ge substrate thickness and optimizing the epitaxy…
We discuss the factors that determine the overall shape and magnitude of the current-voltage (I-V) characteristics of a variety of molecular conductors sandwiched between two metallic contacts. We analyze the individual influences of the…
We measure the current vs voltage (I-V) characteristics of a diodelike tunnel junction consisting of a sharp metallic tip placed at a variable distance d from a planar collector and emitting electrons via electric-field assisted emission.…
The magnetic properties of hole quantum dots in Ge are sensitive to their shape due to the interplay between strong spin-orbit coupling and confinement. We show that the split-off band, surrounding SiGe layers, and hole-hole interactions…
In this paper we review the latest achievements of density functional theory in understanding the physics of diluted magnetic semiconductors. We focus on transition metal doped III-V semiconductors, which show spontaneous ferromagnetic…