Experiments and Modeling of Mass Transport Phenomena in SiGe Devices

Guangrui; Xia

Experiments and Modeling of Mass Transport Phenomena in SiGe Devices

Materials Science 2018-09-27 v1

Authors: Guangrui , Xia

Abstract

Recent experiments and continuum modeling work on dopant diffusion and segregation, Si-Ge interdiffusion, and defect engineering in SiGe material systems are reviewed. Doping impact on Ge thin film quality and interdiffusion is also discussed. These are relevant to SiGe-based semiconductor devices including SiGe hetero-junction bipolar transistors, metal-oxidesemiconductor field-effect transistors, and Ge-on-Si based photonic devices.

Keywords

mass transport sig e devices dopant diffusion si-ge interdiffusion defect engineering ge thin film semiconductor devices

Cite

@article{arxiv.1809.09985,
  title  = {Experiments and Modeling of Mass Transport Phenomena in SiGe Devices},
  author = {Guangrui and Xia},
  journal= {arXiv preprint arXiv:1809.09985},
  year   = {2018}
}

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